R. C. Clarke

Pseudomorphic SiC alloys formed by Ge ion implantation

M. Skowronski, M. Dashiell, J. Kolodzey, 2004 .

Electron emission from silicon tip arrays controlled by np junction minority carrier injection

R. Young, R. Howell, H. Nathanson, 2010 .

High voltage operation in class B GaAs X-band power MESFETs

R. C. Clarke, R. Messham, T.J. Smith, 1989, Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,.

High power 4H-SiC static induction transistors

P. A. Orphanos, R. R. Siergiej, C. D. Brandt, 1995, Proceedings of International Electron Devices Meeting.

A technique to reduce the contact resistance to 4H-silicon carbide using germanium implantation

R. Messham, J. Kolodzey, G. Desalvo, 2002 .

The electrical characteristics of silicon carbide alloyed with germanium

J. Kolodzey, Robert G. Wilson, C. Swann, 2001 .

Advances in silicon carbide (SiC) device processing and substrate fabrication for high power microwave and high temperature electronics

A. Burk, R. Siergiej, R. Hopkins, 1993, 15th Annual GaAs IC Symposium.