P. R. Tripathy

THz Performance of Nano Dimension Si, GaAs and InP ATT Devices

P. R. Tripathy, Pranati Purohit, S. K. Choudhury, 2014 .

Ge/Si Based DDR IMPATTs: A Potential Millimeter-Wave Source at 140 GHz Atmospheric Window

P. R. Tripathy, Shankar P. Pati, S. K. Choudhury, 2014 .

Dynamic properties and avalanche noise analysis of 4H-SiC over wz-GaN based IMPATTs at mm-wave window frequency

P. R. Tripathy, 2011 .

Prospects of wide band gap material ZB-GaN over low band gap GaAs-based IMPATT Devices

P. R. Tripathy, A. K. Panda, S. P. Pati, 2009, 2009 4th International Conference on Computers and Devices for Communication (CODEC).

Si, SiC homo junctions and n-SiC/p-Si hetero junction: MM-wave performance characteristics

P. R. Tripathy, Pranati Purohit, Shankar P. Pati, 2012, Other Conferences.

MM-wave performance and avalanche noise estimation of hexagonal SiC and GaN IMPATTs for D-band applications

P. R. Tripathy, M. Mukherjee, S. P. Pati, 2012, International Journal of Microwave and Wireless Technologies.

Performance of 4H-SiC and Wz-GaN Over InP IMPATT Devices at 1.0 THz Frequency

P. R. Tripathy, M. Mukherjee, S. P. Pati, 2017, Springer Proceedings in Physics.

Avalanche Breakdown Characteristics of Wide Band GaP vis-à-vis Low Band Gap Junctions and High RF Power/Low Noise Generation in ZnS DD IMPATTs

P. R. Tripathy, S. K. Dash, S. P. Pati, 2010 .

Potential of asymmetrical Si/Ge and Ge/Si based hetero-junction transit time devices over homo-junction counterparts for generation of high power

P. R. Tripathy, M. Mukherjee, S. P. Pati, 2011 .

Possible realization of near optimum efficiency from n-Si-Ge/p-Ge-Si DDR Hetero Structure IMPATT Diode

P. R. Tripathy, M. Mukherjee, S. P. Pati, 2011, 2011 National Conference on Communications (NCC).

Possible High Efficiency and RF Power Generation from nGe / pSi Junction Impatt Diodes beyond 100 GHz

P. R. Tripathy, S. K. Choudhury, S. P. Pati, 2015 .