Mutsuyuki Otsubo

发表

Focused Ion Beam Trimming Techniques for MMIC Circuit Optimization (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)

T. Ishikawa, Kazuhiko Itoh, Katsuya Kosaki, 1993 .

A Multi Phase-States MMIC Phase Shifter (Special Issue on Microwave Devices for Mobile Communications)

Noriyuki Tanino, Y. Mitsui, Hiroshi Matsuoka, 1996 .

A New GaAs Negative Voltage Generator for a Power Amplifier Applied to a Single-Chip T/R-MMIC Front-End

Tadashi Takagi, Nobuyuki Kasai, Kazuya Yamamoto, 1996 .

Test structures for the evaluation of air-bridge interconnection in GaAs IC's fabrication process

M. Noda, H. Nakano, M. Nakanishi, 1997, 1997 IEEE International Conference on Microelectronic Test Structures Proceedings.

A single-chip GaAs RF transceiver for 1.9-GHz digital mobile communication systems

Tadashi Takagi, K. Maemura, Nobuyuki Kasai, 1996, IEEE J. Solid State Circuits.

An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10 Gb/s optical transmission systems

Toshiaki Kitano, Junichi Nakagawa, Masaaki Shimada, 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.

Estimation of strain arising from the assembling process and influence of assembling materials on performance of laser diodes

M. Aiga, Mutsuyuki Otsubo, Kimio Shigihara, 1995 .

10-GHz 10-W Internally Matched Flip-Chip GaAs Power FET's

Mutsuyuki Otsubo, T. Ishii, M. Kobiki, 1980 .

Behavior Of Fluorine In N-AlInAs Layers Under Bias-Temperature Stresses

Norio Hayafuji, Mutsuyuki Otsubo, N. Hayafuji, 1996 .

A 1.9 GHz-band GaAs direct-quadrature modulator IC with a phase shifter

Kazuya Yamamoto, K. Maemura, Y. Mitsui, 1992 .

An AlGaAs/InGaAs pseudomorphic HEMT modulator driver IC with low power dissipation for 10 Gb/s optical transmission systems

M. Miyashita, Junichi Nakagawa, Norio Higashisaka, 1996, IMS 1996.