A. Wolkenberg

发表

Trapping properties of the silicon-silicon dioxide interface from electrochemical current-voltage behaviour

A. Wolkenberg, 1979 .

NoteElectrochemical investigation of SiO2Si equivalent charges

A. Wolkenberg, 1981 .

Measurements of n-InGaAs with MBE layers: Relevance of negative magnetoresistance in the investigated samples

A. Wolkenberg, 2014 .

Energetic barrier height hypothesis on the silicon‐electrolyte and gallium arsenide‐electrolyte interfaces

A. Wolkenberg, 1978 .

Charge transport diagnosis by: I–V (resistivity), screening and Debye length, mean free path, Mott effect and Bohr radius in InAs, In0.53Ga0.47As and GaAs MBE epitaxial layers

T. Przesławski, A. Wolkenberg, 2008 .

Electrical charge transport of n–InAs epitaxial films on GaAs

K. Regiński, J. Kaniewski, T. Przesławski, 2002 .

Thickness dependence of the structural and electrical properties of InAs layers epitaxially grown by MBE on GaAs (001)

K. Regiński, J. Kaniewski, J. Bąk-Misiuk, 2000 .

Low-field electron transport mechanism in GaAs Gunn diodes and GaAs/GaAs/sub ins/ layers (MBE)

J. Klamka, T. Przesławski, A. Wolkenberg, 1998, 12th International Conference on Microwaves and Radar. MIKON-98. Conference Proceedings (IEEE Cat. No.98EX195).

Experimental confirmation by galvanomagnetic methods of a complex transport model in In

K. Regiński, J. Kaniewski, T. Przesławski, 2003 .

Electrochemical Method to Determine Physical Surface Properties of Rare-Earth and Manganese Fluoride Doped CdF2 Crystals

B. Wasilewska, A. Wolkenberg, S. Mąǎzyński, 1979, June 16.

A Mechanism for the Effect of Doping on the Silicon Native Oxide Thickness

A. Wolkenberg, 1983 .

Properties of boron implanted silicon dioxide

A. Wolkenberg, B. Wasilewska, B. Wasilewska, 1979 .

Conductivity analysis of n-GaAs molecular beam epitaxial layers using multicarrier fitting

K. Regiński, J. Kaniewski, T. Przesławski, 2006 .

A method for calculating the conductivity mobility spectrum using multi-carrier fitting

K. Regiński, J. Kaniewski, T. Przesławski, 2004 .

Capacitance measurements of the silicon—silicon dioxide—potassium chloride water solution interface as a method to determine the fixed charge value and its centroid

A. Wolkenberg, 1978 .

Anodic current measurements as a method to determine the carrier concentration in silicon

A. Wolkenberg, 1977 .

Application of low energy charged particle beams for chlorine analysis in silicon samples

J. Marczewski, M. Jaskóła, L. Głowacka, 1987 .

A Model of Numerical Calculation of Conductivity for III-V MBE Epilayers Using a Hall Device

A. Wolkenberg, 2013 .

The hypothesis of charge components of the conductivity of a GaAs molecular beam epitaxy epi-layer

T. Przesławski, A. Wolkenberg, 2009 .

Measurement of the resistance of metal-semiconductor-metal structures using the geometrical magnetoresistance technique

Jerzy Klamka, A. Wolkenberg, T. Przesławski, 1992 .

Comments on letter by K. Somogyi

J. Klamka, T. Przesławski, A. Wolkenberg, 1994 .

Magnetic Properties of Electrochemically Deposited Ni/Cu Superlattices

T. Przesławski, A. Wolkenberg, A. Tokarz, 2002 .

Magnetic field sensors built from slightly crystallographic mismatched thin films of In0.53Ga0.47As/InP obtained by MBE and MOCVD

A. Wolkenberg, T. Przesławski, T. Przesławski, 2006 .

Comparative study of sensor and material properties on In₀.₅₃Ga₀.₄₇As/InP fabricated by MBE and MOCVD

T. Przesławski, A. Wolkenberg, 2006 .

Magnetic field sensors based on undoped In 0.53 Ga 0.47 As/InP heterostructures fabricated by molecular beam epitaxy and metalorganic chemical vapor deposition

A. Jasik, J. Kaniewski, T. Przesławski, 2005 .