Kenichi Ishii

发表

Development of SiO2/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctions

Sucheta Gorwadkar, Toshimi Wada, Jun-ichi Shirakashi, 1998, Advanced Lithography.

Antenna system for an automotive glass pane

Kenichi Ishii, Takayasu Hokusho, 1979 .

Emerging double-gate MOS devices technology

Kenichi Ishii, Meishoku Masahara, Eiichi Suzuki, 2003 .

Gate control system

Kenichi Ishii, 2017 .

Demonstration and device design consideration of Vth-controllable independent double-gate mosfet (4-terminal XMOS)

Kenichi Ishii, M. Masahara, Kazuhiko Endo, 2005 .

Systematic electrical characteristics of ideal rectangular cross section Si-Fin channel double-gate MOSFETs fabricated by a wet process

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2003 .

Electron mobility in multi-FinFET with a (111) channel surface fabricated by orientation-dependent wet etching

Hiromi Yamauchi, Kenichi Ishii, M. Masahara, 2005 .

Single electron memory characteristic of silicon nanodot nanowire transistor

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Suppressed threshold voltage roll-off characteristic of 40 nm gate length ultrathin SOI MOSFET

Kenichi Ishii, Tatsuro Maeda, Eiichi Suzuki, 1998 .

High-Temperature Operation of Silicon Carbide MOSFET

Kenichi Ishii, Yutaka Hayashi, Hiroshi Daimon, 1987 .

Demonstration and Analysis of Accumulation-Mode Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor

Kenichi Ishii, Takashi Matsukawa, Meishoku Masahara, 2006 .

Dual metal gate FinFET integration by Ta/Mo diffusion technology for Vt reduction and multi-Vt CMOS application

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2008 .

Sub-5 µm Thin Film Crystalline Silicon Solar Cell on Alumina Ceramic Substrate

Kenichi Ishii, Yutaka Hayashi, Y. Hayashi, 1993 .

Fabrication of ultrathin Si Channel Wall For Vertical Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (DG MOSFET) by Using Ion-Bombardment-Retarded Etching (IBRE)

Kenichi Ishii, Takashi Matsukawa, Meishoku Masahara, 2003 .

Enhancing Noise Margins of Fin-Type Field Effect Transistor Static Random Access Memory Cell by Using Threshold Voltage-Controllable Flexible-Pass-Gates

Hiromi Yamauchi, Kunihiro Sakamoto, Kenichi Ishii, 2009 .

Fabrication and characterization of vertical-type, self-aligned asymmetric double-gate metal-oxide-semiconductor field-effect-transistors

Kunihiro Sakamoto, Kenichi Ishii, Takashi Matsukawa, 2005 .

Highly suppressed short-channel effects in ultrathin SOI n-MOSFETs

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Fin-Type Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistors Fabricated by Orientation-Dependent Etching and Electron Beam Lithography

Kenichi Ishii, H. Takashima, Toshiyuki Tsutsumi, 2003 .

Properties of Si nanowire devices fabricated by using an inorganic EB resist process

Hiroshi Hiroshima, Kenichi Ishii, Toshiyuki Tsutsumi, 2000 .

Experimental Fabrication of XMOS Transistors Using Lateral Solid-Phase Epitaxy of CVD Silicon Films

Kenichi Ishii, Yutaka Hayashi, Toshihiro Sekigawa, 1990 .