G. G. Fountain

发表

Exposure of Diamond to Atomic Hydrogen: Secondary Electron Emission and Conductivity Effects

R. E. Thomas, J. Posthill, R. Markunas, 1994 .

SECONDARY ELECTRON EMISSION ENHANCEMENT AND DEFECT CONTRAST FROM DIAMOND FOLLOWING EXPOSURE TO ATOMIC HYDROGEN

R. E. Thomas, J. Posthill, R. Markunas, 1994 .

Formation of Device Quality Si/SiO 2 Interfaces in a Multichamber Integrated Processing System

G. Lucovsky, R. Markunas, D. Tsu, 1989 .

In-Situ Surface Cleaning of Ge(111) and Si(100) for Epitaxial Growth of Ge AT 300°C Using Remote Plasma Enhanced Chemical Vapor Deposition

S. Hattangady, R. Markunas, D. Vitkavage, 1987 .

Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

G. Lucovsky, S. Hattangady, R. Markunas, 1991 .

GaAs MIS structures with SiO2 using a thin silicon interlayer

S. Hattangady, R. Markunas, D. Vitkavage, 1988 .

Low Temperature Cleaning of Ge and GaAs Surfaces Using Hydrogen Dissociated with a Remote Noble-Gas Discharge

J. Posthill, R. Markunas, M. Mantini, 1989 .

Heteroepitaxial C x Si l−X /Si(100) Metastable Alloys

S. Hattangady, R. Nemanich, J. Posthill, 1990 .

GaAs Heteroepitaxy on Substrate-Engineered Silicon Using Si x Ge 1–x Multilayer Structures

S. Hattangady, R. Venkatasubramanian, J. Posthill, 1990 .

300° C Processing of Si Using Remote Plasma Techniques for In Situ Cleaning, Epitaxy, and Oxide/Nitride/Oxide Depositions

S. Hattangady, J. Posthill, R. Markunas, 1989 .