H. Yamagishi

发表

Fermi Level Stabilization and Surface States at the Interfaces of Si(111) Surfaces and Insulating Layers

H. Yamagishi, 1968 .

Barrier Height of Metal/InP Schottky Contacts with Interface Oxide Layer

H. Yamagishi, 1988 .

An/TaN/WN/GaAs Structure Schottky Gate Formation for Self-Aligned GaAs MESFET

H. Yamagishi, M. Miyauchi, 1985 .

Characteristics of WN/GaAs Schottky Contacts Formed by Reactive RF Sputtering

H. Yamagishi, 1984 .

Analysis of light and current induced effects in hydrogenated amorphous silicon

H. Okamoto, Y. Hamakawa, T. Kamada, 1985 .

NUCLEAR MAGNETIC RESONANCE IN ScN AND VN

K. Kume, H. Yamagishi, 1964 .

Temperature Dependence of Surface Potentials of GaAs {111} and CdS {0001} Surfaces

H. Yamagishi, 1968 .

Temperature Dependence of the Surface Potential of Si(111) Surfaces with a Silicon-Nitride Layer

H. Yamagishi, 1967 .