Zhaoqiang Gan

发表

Microstructure and dielectric properties of silicon nitride films deposited by electron cyclotron resonance plasma chemical vapor deposition

M. Shen, C. Ye, Z. Ning, 1998 .

Dielectric properties of silicon nitride films deposited by microwave electron cyclotron resonance plasma chemical vapor deposition at low temperature

M. Shen, C. Ye, Z. Ning, 1997 .

Preparation of nitrogen-containing carbon films by electrolysis of organic solutions

M. Shen, Y. Xin, S. Ge, 1999 .

Structural evolution of a-C:F:H film prepared by microwave ECR CVD

Xin Yu, F. Zheng, Z. Ning, 2002 .

Dielectric enhancement of sol–gel derived BaTiO3/SrTiO3 multilayered thin films

W. Cao, M. Shen, R. Xu, 2002 .

Enhanced diamond nucleation on pretreated silicon substrates

M. Shen, C. Ye, Z. Ning, 1997 .

Diamond nucleation on smooth silicon with an electrolysis pretreatment in methanol liquid phase

M. Shen, C. Ye, Z. Ning, 1997 .

Oxygen-related dielectric relaxation and leakage characteristics of Pt/(Ba,Sr)TiO3/Pt thin-film capacitors

W. Cao, M. Shen, S. Ge, 2002 .

Rectifying Characteristics of Heterostructures with Diamond and Diamond- Like Carbon Films

M. Shen, C. Ye, Z. Ning, 1997 .

Relaxor-like dielectric behavior of pulsed-laser-deposited Pb0.5Sr0.5TiO3 films

Hua Xu, M. Shen, D. Yao, 2005 .