K. Arai

发表

Surface kinetic aspects of Si incorporation in molecular beam epitaxial growth of GaAs

G. Stillman, N. Iwata, I. Sakuma, 1989 .

Spectroscopic studies of the influence of oxygen partial pressure on the incorporation of residual silicon impurities in vapor‐phase epitaxial gallium arsenide

G. Stillman, N. Tien, J. Aguilar, 1989 .

Vapor Growth of InAsxP1-x

O. Mizuno, K. Arai, 1974 .

Measurement of Isochoric P—V—T Behavior of a Nominal 95-Mol.%-Methane—5-Mol.%-Propane Mixture from Near-Ambient to Cryogenic Temperatures

R. Kobayashi, K. Arai, 1980 .

Deep‐level electron traps in vapor phase epitaxial GaAs grown with oxygen injection

G. Stillman, D. Ruby, K. Arai, 1985 .

Si donor neutralization in high-purity GaAs

J. S. Hughes, G. Stillman, Munho Kim, 1987 .

Local Spin Susceptibility of α-D2I3 (D = bis(ethylendithio)tetraselenafulvalene (BETS) and bis(ethylendithio)dithiadiselenafulvalene (BEDT-STF)) Studied by 77Se NMR

T. Naito, Toshihiro Takahashi, R. Kato, 2011 .