J. K. Kennedy

发表

Residual donors and acceptors in high-purity GaAs and InP grown by hydride VPE

G. Stillman, J. Abrokwah, B. Skromme, 1983 .

Compensation from implantation in GaAs

D. Davies, A. C. Yang, J. K. Kennedy, 1973 .

Low-resistivity n-type layers in InAs x P 1-x by ion implantation

D. Davies, J. K. Kennedy, L. F. Lowe, 1975 .

Urinary excretion of tryptophan metabolites by schizophrenic individuals.

J. K. Kennedy, F. Brown, J. B. White, 1960, The American journal of psychiatry.

Effects of liquid encapsulation on dopant segregation during czochralski growth

A. Witt, J. K. Kennedy, Z.-J. Xing, 1984 .

Comparison of Group IV and VI Doping by Implantation in GaAs

D. Davies, J. K. Kennedy, C. Ludington, 1975 .

The effect of the hydrogen carrier gas flow rate on the electrical properties of epitaxial GaAs prepared in a hydride system

D. Davies, W. Potter, J. K. Kennedy, 1974 .

The effect of various growth parameters on the formation of pits and hillocks on the surface of epitaxial GaAs layers

W. Potter, J. K. Kennedy, 1973 .

Electrical properties of epitaxially grown InAs0.61P0.39 films

Jack R. Anderson, Shengshi Li, J. K. Kennedy, 1975 .

Continuous Horizontal Zone Refining Apparatus

J. K. Kennedy, G. H. Moates, 1966 .

Solution and Theoretical Evaluation of Steady‐State Equations in Continuous Zone Refining

N. G. Parke, J. K. Kennedy, 1964 .

Continuous Zone-Refining Apparatus

J. K. Kennedy, 1964 .