D. Huffaker

Monolithically Integrated III-Sb-Based Laser Diodes Grown on Miscut Si Substrates

M. N. Kutty, G. Balakrishnan, J. Tatebayashi, 2009, IEEE Journal of Selected Topics in Quantum Electronics.

Monolithic integration of a 10 μm cut-off wavelength InAs/GaSb type-II superlattice diode on GaAs platform

F. M. Morales, M. Kesaria, M. Delmas, 2022, Scientific reports.

Strain compensation technique in self-assembled InAs/GaAs quantum dots for applications to photonic devices

Diana L. Huffaker, Luke F. Lester, P. S. Wong, 2009 .

Material and device characterization of Type-II InAs/GaSb superlattice infrared detectors

D. Huffaker, M. Debnath, B. Liang, 2018, Infrared Physics & Technology.

Structural Analysis of Highly Relaxed GaSb Grown on GaAs Substrates with Periodic Interfacial Array of 90° Misfit Dislocations

G. Balakrishnan, L. Dawson, S. Huang, 2009, Nanoscale research letters.

Short-Wave Infrared GaInAsSb Photodiodes Grown on GaAs Substrate by Interfacial Misfit Array Technique

Siew Li Tan, A. Marshall, J. David, 2012, IEEE Photonics Technology Letters.

A comprehensive set of simulation tools to model and design high-performance Type-II InAs/GaSb superlattice infrared detectors

Diana L. Huffaker, Baolai Liang, M. Delmas, 2019, OPTO.