Ichirou Takayasu

Growth of ZnSe on Ge(100) substrates by molecular-beam epitaxy

Eiji Yamaguchi, Ichirou Takayasu, T. Minato, 1987 .

New emission lines in highly carbon ion-implanted GaAs

H. Tanoue, Y. Makita, T. Nomura, 1985 .

Photoluminescence spectra of undoped GaAs grown by molecular‐beam epitaxy at very high and low substrate temperatures

Kazuhiro Kudo, Yunosuke Makita, Tomio Izumi, 1986 .

ZnSe homo-epitaxial growth by molecular beam epitaxy

Ichirou Takayasu, T. Minato, M. Kawashima, 1988 .

RHEED Observation on (001)ZnSe Surface: MBE Surface Phase Diagram and Kinetic Behavior of Zn And Se Adatoms

Ichirou Takayasu, T. Minato, M. Kawashima, 1987 .

Mg+ and Be+ ion implantation into AlxGa1−xAs

H. Tanoue, T. Kanayama, Y. Makita, 1983 .