Paul E. Dodd

发表

Single Event Effects Testing Results in Sandia National Laboratories Via Programmable ASIC Platforms.

John Teifel, Marty R. Shaneyfelt, J. D. Black, 2015 .

Effects of e-beam mail sanitizing process on commercial electronics

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

Highly Focused Ion Beams in Integrated Circuit Testing

Barney Lee Doyle, K. M. Horn, Paul E. Dodd, 1996 .

Resistive Memory for Space Applications.

Barney Lee Doyle, Michael Lee McLain, Andrew J. Lohn, 2015 .

Outstanding conference paper award 2014 IEEE nuclear and space radiation effects conference

Kenneth A. LaBel, Robert A. Reed, Barney Lee Doyle, 2014 .

Securing Trusted Rad-Hard Electronics for the Future.

Paul E. Dodd, Richard Dondero, Bruce L. Draper, 2015 .

Time resolved ion beam induced charge collection

Barney Lee Doyle, F. W. Sexton, Paul E. Dodd, 2000 .

Impact of technology trends on SEU in CMOS SRAMs

Marty R. Shaneyfelt, F. W. Sexton, Paul E. Dodd, 1996 .

Critical charge concepts for CMOS SRAMs

F. W. Sexton, Paul E. Dodd, P. Dodd, 1995 .

Charge collection and SEU from angled ion strikes

Marty R. Shaneyfelt, Paul E. Dodd, F. W. Sexton, 1997 .

Heavy Ion Microbeam and Broadbeam Transients in SiGe HBTs

Kenneth A. LaBel, Robert A. Reed, R. M. Diestelhorst, 2009 .

Basic mechanisms and modeling of single-event upset in digital microelectronics

Lloyd W. Massengill, Paul E. Dodd, P. Dodd, 2003 .

Using MRED to Screen Multiple-Node Charge-Collection Mitigated SOI Layouts

Ronald D. Schrimpf, John Teifel, Marty R. Shaneyfelt, 2019, IEEE Transactions on Nuclear Science.

Device simulation of charge collection and single-event upset

Paul E. Dodd, P. Dodd, 1996 .

Sandia national Laboratories microelectronics program.

Kwok Kee Ma, Paul E. Dodd, F. W. Sexton, 2005 .

The Sandia Ion-Electron-Optical ''Radiation Microscope''

D. S. Walsh, K. M. Horn, Paul E. Dodd, 2000 .

Effectiveness of Body Ties for Imporving the Soft Error Tolerance of SOI Technologies

Marty R. Shaneyfelt, Paul E. Dodd, Bruce L. Draper, 1999 .

Hardness Assurance Issues for Proton Testing for Space Environments.

Veronique Ferlet-Cavrois, Marty R. Shaneyfelt, Philippe Paillet, 2006 .

Radiation-hardened distributed power systems.

Joseph Brandon Witcher, Z. John Shen, Patrick Shea, 2010 .

harge Collection and SEU from Angled Io

Paul E. Dodd, F. W. Sexton, Marty R. Shaneyfelt, 1997 .

Neutron-induced latchup in SRAMs at ground level

Paul E. Dodd, G. L. Hash, J. R. Schwank, 2003, 2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual..

A methodology for identifying laser parameters for equivalent heavy-ion hits

L. W. Massengill, Bharat L. Bhuva, Xiaowei Zhu, 2001 .

Outstanding Conference Paper Award 2009 IEEE Nuclear and Space Radiation Effects Conference

Jonathan A. Pellish, David F. Heidel, Kenneth A. LaBel, 2009 .

Single-event upset and snapback in silicon-on-insulator devices

P. S. Winokur, G. L. Hash, Paul E. Dodd, 2000 .

Charge collection in SOI capacitors and circuits and its effect on SEU hardness

D. S. Walsh, Barney Lee Doyle, Marty R. Shaneyfelt, 2002 .

Mapping of Radiation-Induced Resistance Changes and Multiple Conduction Channels in ${\rm TaO}_{\rm x}$ Memristors

Andrew J. Lohn, Patrick R. Mickel, Matthew J. Marinella, 2014, IEEE Transactions on Nuclear Science.

Three-dimensional simulation of charge collection and multiple-bit upset in Si devices

P. S. Winokur, F. W. Sexton, Paul E. Dodd, 1994 .

Analysis of heavy-ion induced charge collection mechanisms in SOI circuits

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 2004 .

A Comparison of the Radiation Response of ${\rm TaO}_{\rm x}$ and ${\rm TiO}_2$ Memristors

Andrew J. Lohn, Patrick R. Mickel, Matthew J. Marinella, 2013, IEEE Transactions on Nuclear Science.

New insights into fully-depleted SOI transistor response after total-dose irradiation

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999 .

Impact of substrate thickness on single-event effects in integrated circuits

Marty R. Shaneyfelt, P. S. Winokur, F. W. Sexton, 2001 .

Impact of passivation layers on enhanced low-dose-rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar linear ICs

R. L. Pease, Barney Lee Doyle, Daniel M. Fleetwood, 2002 .

Charge Trapping and Annealing in High- Gate Dielectrics

Daniel M. Fleetwood, Marty R. Shaneyfelt, Paul E. Dodd, 2004 .

Effects of particle energy on proton and neutron-induced single-event latchup.

Marty R. Shaneyfelt, Philippe Paillet, J. Baggio, 2005 .

Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

Barney Lee Doyle, F. W. Sexton, J. F. Aurand, 1998 .

3-D simulation of heavy-ion induced charge collection in SiGe HBTs

Alvin J. Joseph, John D. Cressler, Paul W. Marshall, 2003 .

Investigation of body-tie effects on ion beam induced charge collection in silicon-on-insulator FETs using the Sandia nuclear microprobe

Marty R. Shaneyfelt, Paul E. Dodd, David S. Walsh, 2000 .

SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

D. S. Walsh, P. S. Winokur, F. W. Sexton, 2001 .

Effects of angle of incidence on proton-induced single-event latchup.

Veronique Ferlet-Cavrois, Marty R. Shaneyfelt, Philippe Paillet, 2006 .

Optimum laboratory radiation source for hardness assurance testing

Marty R. Shaneyfelt, F. W. Sexton, J. R. Schwank, 2001 .

Time-resolved ion beam induced charge collection (TRIBICC) in micro-electronics

D. S. Walsh, Barney Lee Doyle, F. W. Sexton, 1999 .

Improved capabilities for proton and neutron irradiations at TRIUMF

Marty R. Shaneyfelt, Paul E. Dodd, E. W. Blackmore, 2003, 2003 IEEE Radiation Effects Data Workshop.

Radiation-Induced Charge Trapping in Thin

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2003 .

Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements

David F. Heidel, Kenneth A. LaBel, Veronique Ferlet-Cavrois, 2009 .

Radiation effects microscopy for failure analysis of microelectronic devices

Barney Lee Doyle, Marty R. Shaneyfelt, J. R. Schwank, 2005 .

Single-event upset and snapback in silicon-on-insulator devices and integrated circuits

D. S. Walsh, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

Long-term reliability degradation of ultrathin dielectric films due to heavy-ion irradiation

Lloyd W. Massengill, Kenneth F. Galloway, Ronald D. Schrimpf, 2002 .

Challenges in hardening technologies using shallow-trench isolation

Marty R. Shaneyfelt, Paul E. Dodd, Bruce L. Draper, 1998 .

Single event gate rupture in thin gate oxides

Daniel M. Fleetwood, F. W. Sexton, Paul E. Dodd, 1997 .

Radiation-induced charge trapping in thin Al/sub 2/O/sub 3//SiO/sub x/N/sub y//Si(100) gate dielectric stacks

E. P. Gusev, Ronald D. Schrimpf, Daniel M. Fleetwood, 2003 .

Correlation between Co-60 and X-ray radiation-induced charge buildup in silicon-on-insulator buried oxides

Daniel M. Fleetwood, Marty R. Shaneyfelt, P. S. Winokur, 2000 .

BUSFET-a radiation-hardened SOI transistor

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999 .

Influence of total-dose radiation on the electrical characteristics of SOI MOSFETs

Ronald D. Schrimpf, Daniel M. Fleetwood, Marty R. Shaneyfelt, 2004 .

Passivation layers for reduced total dose effects and ELDRS in linear bipolar devices

R. L. Pease, Marty R. Shaneyfelt, J. R. Schwank, 2003 .

New insights into fully-depleted SOI transistor response after total-dose irradiation

Marty R. Shaneyfelt, J. R. Schwank, Paul E. Dodd, 1999, 1999 Fifth European Conference on Radiation and Its Effects on Components and Systems. RADECS 99 (Cat. No.99TH8471).