Peter M. Smowton

Deep-etched III-V lasers grown directly on silicon substrates

Siming Chen, Huiyun Liu, Samuel Shutts, 2016, 2016 IEEE Photonics Conference (IPC).

Measurement of optical gain and Fermi level separation in semiconductor structures

Peter Blood, Huw D. Summers, John D. Thomson, 2000, Photonics West - Optoelectronic Materials and Devices.

Growth and characterization of multiple layer quantum dot lasers

Mark Hopkinson, Peter M. Smowton, Ian R. Sellers, 2005, SPIE OPTO.

Temperature dependence of gain in multiple-layer quantum dots

Peter Blood, Xin Gao, Lijun Wang, 2001, SPIE/OSA/IEEE Asia Communications and Photonics.

Gain characteristics of GaInP quantum well laser structures

Peter Blood, Gareth M. Lewis, John D. Thomson, 2002, SPIE OPTO.

Time evolution of piezoelectic field screening in InGaN quantum wells

Peter Blood, Weng W. Chow, John D. Thomson, 2005, SPIE OPTO.

Mode structure of quantum dot semiconductor lasers

John Houlihan, Guillaume Huyet, Mark Hopkinson, 2004, SPIE Photonics Europe.

Growth and characterisation of multiple layer quantum dot lasers

Mark Hopkinson, Peter M. Smowton, D. J. Mowbray, 2005 .

Low-noise 13  μm InAs/GaAs quantum dot laser monolithically grown on silicon

Yi Wang, Siyuan Yu, Zhixin Liu, 2018, Photonics Research.