J. Nam

Electrostatically Controllable Channel Thickness and Tunable Low-Frequency Noise Characteristics of Double-Gated Multilayer MoS2 Field-Effect Transistors with h-BN Dielectric.

Dong Su Lee, D. Jeon, Min-Hae Park, 2022, ACS applied materials & interfaces.

Reduction of Surface Roughness in Epitaxially Grown Germanium by Controlled Thermal Oxidation

Krishna C. Saraswat, Jae Hyung Lee, Yeul Na, 2015, IEEE Electron Device Letters.

Enhancement of Phosphorus Dopant Activation and Diffusion Suppression by Fluorine Co-Implant in Epitaxially Grown Germanium

K. Saraswat, A. Nainani, W. Jung, 2012, 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM).

Germanium on Insulator (GOI) Structure Using Hetero-Epitaxial Lateral Overgrowth on Silicon

K. Saraswat, Y. Nishi, T. Fuse, 2012 .

Effects of Thermal Annealing on In Situ Phosphorus-Doped Germanium $\hbox{n}^{+}/\hbox{p}$ Junction

K. Saraswat, Jin-Hong Park, Jaewoo Shim, 2013, IEEE Electron Device Letters.

Nickel oxide carrier selective contacts for silicon solar cells

K. Saraswat, Raisul Islam, P. Ramesh, 2015, 2015 IEEE 42nd Photovoltaic Specialist Conference (PVSC).