Changhee Lee

发表

Tunable Electron and Hole Injection Enabled by Atomically Thin Tunneling Layer for Improved Contact Resistance and Dual Channel Transport in MoS2/WSe2 van der Waals Heterostructure.

D. Youn, Gil-Ho Kim, S. Yun, 2018, ACS applied materials & interfaces.

High performance self-gating graphene/MoS2 diode enabled by asymmetric contacts

Kenji Watanabe, T. Taniguchi, D. Youn, 2018, Nanotechnology.

Effects of CH2F2 and H2 flow rates on process window for infinite etch selectivity of silicon nitride to ArF PR in dual-frequency CH2F2/H2/Ar capacitively coupled plasmas

H. Mok, C. Park, Ho-Jin Kim, 2008 .

Comparison of etching characteristics of SiO2 with ArF photoresist in C4F6 and C4F8 based dual-frequency superimposed capacitively coupled plasmas

C. Park, N.-E. Lee, Changhee Lee, 2007 .