J. Bourgeat

Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies

Jean Jimenez, Philippe Galy, D. Marin-Cudraz, 2011, Microelectron. Reliab..

New modular bi-directional power-switch and self ESD protected in 28nm UTBB FDSOI advanced CMOS technology

Philippe Galy, D. Marin-Cudraz, J. Bourgeat, 2014, 2014 IEEE International Conference on IC Design & Technology.

Beta-Matrix ESD network: Throughout end of placement rules?

P. Galy, J. Bourgeat, B. Jacquier, 2011, 2011 IEEE International Conference on IC Design & Technology.

Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application

J. M. Fournier, Jean Jimenez, Philippe Galy, 2013, Microelectron. Reliab..

β matrix concept for ESD power devices, demonstrators in C45nm & C32nm CMOS technology

P. Galy, J. Bourgeat, A. Dray, 2011, EOS/ESD Symposium Proceedings.

Comparison between isolated SCR & embedded dual isolated SCR power devices for ESD power clamp in C45nm CMOS technology

P. Galy, J. Bourgeat, A. Dray, 2010, 2010 IEEE International Conference on Integrated Circuit Design and Technology.

ESD protection with BIMOS transistor for bulk & FDSOI advanced CMOS technology

C. Fenouillet-Beranger, Ph Galy, D. Golanski, 2013, CAS 2013 (International Semiconductor Conference).

A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node

Jean Jimenez, Philippe Galy, D. Marin-Cudraz, 2011, Microelectron. Reliab..

Evaluation of the ESD performance of local protections based on SCR or bi-SCR with dynamic or static trigger circuit in 32 nm

Philippe Galy, D. Marin-Cudraz, Marise Bafleur, 2010, Microelectron. Reliab..

Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology

Jean Jimenez, Philippe Galy, D. Marin-Cudraz, 2012, Microelectron. Reliab..