F. Wischmeyer

发表

Formation and Prevention of Micropipes and Voids in CVD Carbonization Experiments on (100) Silicon

U. Gösele, R. Scholz, E. Niemann, 1997 .

Prevention of micropipes and voids at β-SiC/Si(100) interfaces

U. Gösele, R. Scholz, E. Niemann, 1998 .

CVD growth of 3C-SiC on SOI (100) substrates with optimized interface structure

W. Wondrak, E. Niemann, F. Wischmeyer, 1999 .

Micropipe defects and voids at β-SiC/Si(100) interfaces

U. Gösele, R. Scholz, E. Niemann, 1997 .

Improvements of the SiC homoepitaxy process in a horizontal cold-wall CVD reactor

H. Hartnagel, E. Niemann, F. Wischmeyer, 1999 .

Modeling Analysis of SiC CVD in a Planetary Reactor

Y. Makarov, A. I. Zhmakin, M. Heuken, 2001 .

High-Performance Multi-Wafer SiC Epitaxy – First Results of Using a 10x100mm Reactor

C. Hecht, H. Kitahata, R. Stein, 2010 .

Homoepitaxial Growth of 4H- and 6H-SiC in a Commercial Horizontal LPCVD Reactor

E. Niemann, F. Wischmeyer, D. Leidich, 1997 .

High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

Ernst Obermeier, G. Krötz, H. Möller, 1999 .