G. Derst

发表

Preparation of crystalline SiC thin films by plasma-enhanced chemical vapour deposition and by ion beam modification of silicon

G. Müller, S. Kalbitzer, G. Krötz, 1992 .

Dopant-defect interactions in hydrogen-free amorphous silicon

B. Dobson, A. Dent, G. Müller, 1996 .

Studying the Environments of Ion-Implanted Arsenic Defects in Amorphous and Recrystallised Silicon with Impurity EXAFS

A. Dent, G. Müller, G. Greaves, 1997 .

Silicon oxide structures measured at the surfaces of silicon and silicate glass: a reflectivity study

Andrew D. Smith, G. Greaves, G. Dorssen, 1995 .

Evidence for the Compensated Continuous Random Network Model for Spodumene Glass and Analogues

R. Mcgreevy, Mark E. Smith, M. Jermy, 1996 .

The Changing Environments of Dopants in Amorphous Silicon at Various Stages of Annealing

B. Dobson, A. Dent, G. Müller, 1993 .

Effect of ion-beam induced disorder on optical interband transitions in Si and GaAs

K. L. Bhatia, S. Kalbitzer, C. Wilbertz, 1994 .

Optical properties of SiC for crystalline/amorphous pattern fabrication

G. Derst, S. Kalbitzer, W. Krätschmer, 1989 .

Influence of Al and P doping on optical and electrical properties of ion beam synthesized SiC

A. Battaglia, S. Kalbitzer, G. Derst, 1993 .