H. Möller

发表

Heteroepitaxial growth of 3C-SiC on SOI for sensor applications

M. Eickhoff, S. Zappe, E. Obermeier, 1999 .

SOL thickness dependence of residual strain in SOI material

M. Eickhoff, J. Camassel, L. Falkovsky, 1999 .

High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

M. Eickhoff, G. Krötz, H. Möller, 1999 .

Influence of crystal quality on the electronic properties of n-type 3C-SiC grown by low temperature low pressure chemical vapor deposition

M. Stutzmann, M. Eickhoff, S. Zappe, 2004 .

The evolution of cavities in Si at the 3C-SiC/Si interface during 3C-SiC deposition by LPCVD

M. Eickhoff, J. Stoemenos, G. Krötz, 1999 .

Stabilization of the 3C-SiC/SOI system by an intermediate silicon nitride layer

S. Zappe, E. Obermeier, W. Skorupa, 1999 .

Influence of the silicon overlayer thickness of SOI unibond substrates on β-SIC heteroepitaxy

M. Eickhoff, J. Stoemenos, G. Krötz, 1999 .

Selective growth of high-quality 3C-SiC using a SiO2 sacrificial-layer technique

M. Eickhoff, H. Möller, M. Rapp, 1999 .

A modular system of SiC-based microhotplates for the application in metal oxide gas sensors

F. Solzbacher, E. Obermeier, H. Möller, 2000 .

Suppression of Si Cavities at the SiC/Si Interface during Epitaxial Growth of 3C-SiC on Silicon-on-Insulator

M. Eickhoff, J. Stoemenos, G. Krötz, 2001 .

High temperature piezoresistive β-SiC-on-SOI pressure sensor with on chip SiC thermistor

Ernst Obermeier, G. Krötz, H. Möller, 1999 .