J.H. Jeong

Highly manufacturable and high performance SDR/DDR 4 Gb DRAM

C.H. Lee, Y.S. Hwang, K.N. Kim, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).

Effect of gain expansion of MMIC power amplifier for high order modulation OFDM portable system

K.C. Lee, J.H. Jeong, Joon H. Kim, 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

Development of all power supplies with a new design utilized for NBI-2 system on KSTAR

J.H. Jeong, H.S. Ahn, W. Cho, 2021 .

Highly manufacturable 4 Gb DRAM using using 0.11 /spl mu/m DRAM technology

Y.S. Hwang, M.H. Cho, W.S. Yang, 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).

Switching Properties in Spin Transper Torque MRAM with sub-5Onm MTJ size

U-In Chung, H.S. Kim, S.O. Park, 2006, 2006 7th Annual Non-Volatile Memory Technology Symposium.

Static noise margin of the full DG-CMOS SRAM cell using bulk FinFETs (Omega MOSFETs)

S.Y. Han, J.H. Jeong, H.S. Kang, 2003, IEEE International Electron Devices Meeting 2003.