Shenglei Zhao

发表

Comprehensive Design of Device Parameters for GaN Vertical Trench MOSFETs

Hong Zhou, Jincheng Zhang, Shuang Liu, 2020, IEEE Access.

Progress in state-of-the-art technologies of Ga2O3 devices

Yue Hao, Chunfu Zhang, Shenglei Zhao, 2021 .

Trap states in AlGaN channel high-electron-mobility transistors

Kai Zhang, Xiaohua Ma, Yue Hao, 2013 .

Enhancement-mode Al2O3/InAlN/AlN/GaN metal–insulator–semiconductor high-electron-mobility transistor with enhanced breakdown voltage using fluoride-based plasma treatment

Xiaohua Ma, Yue Hao, JunShuai Xue, 2014 .

Reverse blocking enhancement of drain field plate in Schottky-drain AlGaN/GaN high-electron mobility transistors

Yuan Wang, Xiaohua Ma, Yue Hao, 2014 .

Mechanism of improving forward and reverse blocking voltages in AlGaN/GaN HEMTs by using Schottky drain

Yi Wang, Xiaohua Ma, Yue Hao, 2014 .

Non-recessed-gate quasi-E-mode double heterojunction AlGaN/GaN high electron mobility transistor with high breakdown voltage

Xiaohua Ma, Yue Hao, Kai Zhang, 2014 .

Field plate structural optimization for enhancing the power gain of GaN-based HEMTs

Kai Zhang, Xiaohua Ma, Yue Hao, 2013 .

GeSn Quantum Well P-Channel Tunneling FETs Fabricated on Si(001) and (111) With Improved Subthreshold Swing

Yue Hao, Chunfu Zhang, Yan Liu, 2016, IEEE Electron Device Letters.