X. Xue

发表

A 2D2R ReRAM CIM accelerator for multilayer perceptron in visual classification applications

Chenyang Zhao, Ruijun Lin, Keji Zhou, 2022, Microelectron. J..

Probabilistic Circuit Implementation Based on P-Bits Using the Intrinsic Random Property of RRAM and P-Bit Multiplexing Strategy

H. Lv, Bo Peng, Yongkang Han, 2022, Micromachines.

A 3D RRAM Using a Stackable Multi-Layer 1TXR Cell

Ji Zhang, Gang Jin, Yuxin Wu, 2010, IEICE Trans. Electron..

24.2 A 14nm-FinFET 1Mb Embedded 1T1R RRAM with a 0.022µ m2 Cell Size Using Self-Adaptive Delayed Termination and Multi-Cell Reference

H. Lv, Ming Liu, Xiaoxin Xu, 2021, 2021 IEEE International Solid- State Circuits Conference (ISSCC).

Compute-in-Memory for Numerical Computations

G. Dong, Yanning Chen, Dongyan Zhao, 2022, Micromachines.

Complementary Memory Cell Based on Field-Programmable Ferroelectric Diode for Ultra-Low Power Current-SA Free BNN Applications

Qi Liu, H. Lv, Ming Liu, 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

An Automatic Task Partition Method for Multi-core System

Zhiyi Yu, Yibo Fan, Ming-e Jing, 2018, 2018 IEEE International Symposium on Circuits and Systems (ISCAS).

A 28nm 512Kb adjacent 2T2R RRAM PUF with interleaved cell mirroring and self-adaptive splitting for extremely low bit error rate of cryptographic key

Yuejun Zhang, Ming Liu, Xiaoyang Zeng, 2019, 2019 IEEE Asian Solid-State Circuits Conference (A-SSCC).

All-Electrical Control of Compact SOT-MRAM: Toward Highly Efficient and Reliable Non-Volatile In-Memory Computing

Huai Lin, Guozhong Xing, Feng Zhang, 2022, Micromachines.

Binary Convolutional Neural Network Based on 3d Field-Programmable Ferroelectric Diode Array

H. Lv, Ming Liu, Jiezhi Chen, 2020, SSRN Electronic Journal.

ARBiS: A Hardware-Efficient SRAM CIM CNN Accelerator With Cyclic-Shift Weight Duplication and Parasitic-Capacitance Charge Sharing for AI Edge Application

Chenyang Zhao, Jingwen Jiang, Jinbei Fang, 2023, IEEE Transactions on Circuits and Systems I: Regular Papers.

Logic gates based on neuristors made from two-dimensional materials

Chunsen Liu, Weida Hu, Jianlu Wang, 2021, Nature Electronics.

Low-Power Variation-Tolerant Nonvolatile Lookup Table Design

Jianguo Yang, Jingang Wu, Yinyin Lin, 2016, IEEE Transactions on Very Large Scale Integration (VLSI) Systems.

Area-Efficient 1T-2D-2MTJ SOT-MRAM Cell for High Read Performance

Xiaoxin Xu, Ruijun Lin, Jianguo Yang, 2023, IEEE Transactions on Circuits and Systems II: Express Briefs.

A 0.75 V reference clamping sense amplifier for low-power high-density ReRAM with dynamic pre-charge technique

Peng Yuan, Qing Luo, Xiaoxin Xu, 2019, IEICE Electron. Express.

A 1T2R1C ReRAM CIM Accelerator With Energy-Efficient Voltage Division and Capacitive Coupling for CNN Acceleration in AI Edge Applications

Chenyang Zhao, Keji Zhou, Zhiwang Guo, 2023, IEEE Transactions on Circuits and Systems - II - Express Briefs.

An Energy Efficient Computing-in-Memory Accelerator With 1T2R Cell and Fully Analog Processing for Edge AI Applications

Xiaoyang Zeng, Jun Han, Xiaoyong Xue, 2021, IEEE Transactions on Circuits and Systems II: Express Briefs.

A 28nm 1.5Mb Embedded 1T2R RRAM with 14.8 Mb/mm2 using Sneaking Current Suppression and Compensation Techniques

Meng-Fan Chang, Xiaoxin Xu, Ming Liu, 2020, 2020 IEEE Symposium on VLSI Circuits.

A Novel PUF Using Stochastic Short-Term Memory Time of Oxide-Based RRAM for Embedded Applications

Ming Liu, H. Lv, Xiaoyang Zeng, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

A Machine-Learning-Resistant 3D PUF with 8-layer Stacking Vertical RRAM and 0.014% Bit Error Rate Using In-Cell Stabilization Scheme for IoT Security Applications

Ming Liu, H. Lv, Xiaoyang Zeng, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Novel 2T programmable element to improve density and performance of FPGA

Yinyin Lin, Yufeng Xie, Xiaoyong Xue, 2011, IEICE Electron. Express.

Endurance Prediction Based on Hidden Markov Model and Programming Optimization for 28nm 1Mbit Resistive Random Access Memory Chip

Xiaoxin Xu, Danian Dong, Bing Chen, 2023, IEEE Electron Device Letters.

A 9Mb HZO-Based Embedded FeRAM with 1012-Cycle Endurance and 5/7ns Read/Write using ECC-Assisted Data Refresh and Offset-Canceled Sense Amplifier

H. Lv, Yue Cao, Meilin Liu, 2023, 2023 IEEE International Solid- State Circuits Conference (ISSCC).

A 0.13µm 8Mb logic based CuxSiyO resistive memory with self-adaptive yield enhancement and operation power reduction

G. Chen, R. Huang, X. Y. Xue, 2012, 2012 Symposium on VLSI Circuits (VLSIC).

An Emerging NVM CIM Accelerator With Shared-Path Transpose Read and Bit-Interleaving Weight Storage for Efficient On-Chip Training in Edge Devices

Chenyang Zhao, Keji Zhou, Zhiwang Guo, 2023, IEEE Transactions on Circuits and Systems II: Express Briefs.

MSPAN: A Memristive Spike-Based Computing Engine With Adaptive Neuron for Edge Arrhythmia Detection

Yifan Zhao, Fengshi Tian, Jingwen Jiang, 2021, Frontiers in Neuroscience.

A 28 nm 81 Kb 59–95.3 TOPS/W 4T2R ReRAM Computing-in-Memory Accelerator With Voltage-to-Time-to-Digital Based Output

Chenyang Zhao, Xumeng Zhang, Chixiao Chen, 2022, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.