J. Ackaert

Interpoly Oxide Related Fast Bit Failures in the Himos™ Flash Memory Cell

T. Yao, P. Gassot, A. Lowe, 2006, 2006 IEEE International Conference on IC Design and Technology.

Charging induced damage on complex-antenna test structures

Cora Salm, J. Ackaert, Fred G. Kuper, 2001 .

Strategies to cope with plasma charging damage in design and layout phases

A. Scarpa, J. Ackaert, Z. Wang, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

Plasma damage in HIMOS/spl trade/ non-volatile memories (NVM)

T. Yao, L. Haspeslagh, S. Boonen, 2004, 2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866).

Improvement of non volatile memory tunnel oxide robustness and integrity by design optimization of the memory cell

T. Yao, A. Lowe, J. Ackaert, 2005, 2005 International Conference on Integrated Circuit Design and Technology, 2005. ICICDT 2005..

MIMC Reliability and Electrical Behavior Defined by a Physical Layer Property of the Dielectric

Jean-Pierre Raskin, Rémy Charavel, Alexandru Vlad, 2008 .

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, 7th International Symposium on Plasma- and Process-Induced Damage.

Correlation between hot carrier stress, oxide breakdown and gate leakage current for monitoring plasma processing induced damage on gate oxide

J. Ackaert, E. De Backer, C. Salm, 2002, Proceedings of the 9th International Symposium on the Physical and Failure Analysis of Integrated Circuits (Cat. No.02TH8614).