D. Brazzelli

Methodology for Word Line-Contact Dielectric Characterization in Flash Normemories

G. Ghidini, A. Sebastiani, A. Ghetti, 2007, 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual.

Impact of interface and bulk trapped charges on transistor reliability

G. Ghidini, G. Giusto, D. Brazzelli, 2005, Microelectron. Reliab..

Oxide Thinning in Shallow Trench Isolation

G. Ghidini, R. Bottini, D. Brazzelli, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Anomalous gate oxide conduction on isolation edges: analysis and process optimization

G. Ghidini, D. Brazzelli, A. Benvenuti, 2003, Microelectron. Reliab..

Evaluation methodology of thin dielectrics for non-volatile memory application

G. Ghidini, D. Brazzelli, 2002, Microelectron. Reliab..

Optimization of WSi2 by SiH4 CVD: impact on oxide quality

G. Ghidini, D. Brazzelli, C. Riva, 2001, Microelectron. Reliab..

A 65nm NOR flash technology with 0.042/spl mu/m/sup 2/ cell size for high performance multilevel application

A. Ghetti, D. Brazzelli, G. Servalli, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Stress induced leakage current and bulk oxide trapping: temperature evolution

G. Ghidini, A. Sebastiani, D. Brazzelli, 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).