I. Meric

Transistor reliability characterization and comparisons for a 14 nm tri-gate technology optimized for System-on-Chip and foundry platforms

C. Tsai, P. Bai, N. L. Dias, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Aging model challenges in deeply scaled tri-gate technologies

S. Mudanai, S. Ramey, C. Prasad, 2015, 2015 IEEE International Integrated Reliability Workshop (IIRW).

Transistor reliability characterization and modeling of the 22FFL FinFET technology

S. Liu, L. Jiang, K. Phoa, 2018, 2018 IEEE International Reliability Physics Symposium (IRPS).