M. Yakimov

All-epitaxial VCSELs with tunnel QW-QD InGaAs-InAs gain medium

V. Tokranov, M. Yakimov, J. van Eisden, 2007, SPIE OPTO.

Tunnel quantum well-on-dots InGaAs-InAs high-gain medium for laser diodes

V. Tokranov, M. Yakimov, J. van Eisden, 2006, SPIE OPTO.

Modulation and thermal properties of tunnel-coupled InAs QD 1.13μm VCSELs

V. Tokranov, M. Yakimov, J. van Eisden, 2008, SPIE OPTO.

Modulation properties of VCSEL with intracavity modulator

V. Tokranov, M. Yakimov, J. van Eisden, 2007, SPIE OPTO.

High frequency resonance-free loss modulation in a duo-cavity VCSEL

V. Tokranov, M. Yakimov, J. van Eisden, 2008, SPIE OPTO.

Charge Trapping and Wearout Characteristics of Self-Aligned Enhancement-Mode GaAs n-MOSFET with Si Interface Passivation Layer and HfO2 Gate Oxide

S. Koveshnikov, J.C. Lee, V. Tokranov, 2008, 2008 IEEE Compound Semiconductor Integrated Circuits Symposium.

Optically Decoupled Loss Modulation in a Duo-Cavity VCSEL

V. Tokranov, M. Yakimov, J. van Eisden, 2008, IEEE Photonics Technology Letters.

Addressing the gate stack challenge for high mobility InxGa1-xAs channels for NFETs

S. Koveshnikov, S. Datta, V. Tokranov, 2008, 2008 IEEE International Electron Devices Meeting.

Self-Aligned n- and p-channel GaAs MOSFETs on Undoped and P-type Substrates Using HfO2 and Silicon Interface Passivation Layer

S. Koveshnikov, J.C. Lee, V. Tokranov, 2006, 2006 International Electron Devices Meeting.