Joaquín Alvarado

发表

Automatic parameter extraction technique for gate leakage current modeling in double gate MOSFET

Antonio Cerdeira, Benjamin Iniguez, Ghader Darbandy, 2013 .

Review on double-gate MOSFETs and FinFETs modeling

Denis Flandre, B. Iniguez, J. C. Tinoco, 2013 .

Compact model for single event transients and total dose effects at high temperatures for partially depleted SOI MOSFETs

Denis Flandre, El Hafed Boufouss, Joaquín Alvarado, 2010, Microelectron. Reliab..

Gate leakage currents model for FinFETs implemented in Verilog‐A for electronic circuits design

Denis Flandre, Antonio Cerdeira, Valeriya Kilchytska, 2014 .

Harmonic distortion analysis using an improved charge sheet model for PD SOI MOSFETs

Denis Flandre, Antonio Cerdeira, Joaquín Alvarado, 2007, Microelectron. J..

Characterization and modelling of single event transients in LDMOS-SOI FETs

Denis Flandre, El Hafed Boufouss, Joaquín Alvarado, 2011, Microelectron. Reliab..

Implementation of the symmetric doped double-gate MOSFET model in Verilog-A for circuit simulation

Denis Flandre, Antonio Cerdeira, Benjamin Iniguez, 2010 .

RF modeling of 40‐nm SOI triple‐gate FinFET

Antonio Cerdeira, Jean-Pierre Raskin, A. G. Martinez-Lopez, 2015 .

High-energy neutrons effect on strained and non-strained SOI MuGFETs and planar MOSFETs

Denis Flandre, Cor Claeys, Eddy Simoen, 2012, Microelectron. Reliab..

Impact of neutron irradiation on the RF properties of oxidized high-resistivity silicon substrates with and without a trap-rich passivation layer

Denis Flandre, Jean-Pierre Raskin, Joaquín Alvarado, 2011, Microelectron. Reliab..

Automatic parameter extraction techniques in IC-CAP for a compact double gate MOSFET model

Antonio Cerdeira, Benjamin Iniguez, Ghader Darbandy, 2013 .

Application of the Symmetric Doped Double-Gate Model in Circuit Simulation Containing Double-Gate Graded-Channel Transistors

Marcelo Antonio Pavanello, Antonio Cerdeira, Joaquín Alvarado, 2009 .

A Compact Model for Single Event Effects in PD SOI Sub-Micron MOSFETs

Denis Flandre, Valeriya Kilchytska, Joaquín Alvarado, 2011, IEEE Transactions on Nuclear Science.

Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models

Giuseppe Iannaccone, Antonio Cerdeira, Enrico Sangiorgi, 2013, Microelectron. J..

Effect of high-energy neutrons on MuGFETs

Denis Flandre, Otilia Militaru, Nadine Collaert, 2010 .

Gate-edge charges related effects and performance degradation in advanced multiple-gate MOSFETs

Denis Flandre, Cor Claeys, Rita Rooyackers, 2011 .