T. Walsh

Enhanced performance of an AlGaN/GaN high electron mobility transistor on Si by means of improved adatom diffusion length during MOCVD epitaxy

F. Shahedipour-Sandvik, K. Jones, P. Suvarna, 2013 .

The effect of carbon impurities on lightly doped MOCVD GaN Schottky diodes

F. Shahedipour-Sandvik, P. Suvarna, M. Tungare, 2011 .

Power Density and Efficiency of Thermophotovoltaic Energy Conversion Using a Photonic-Crystal Emitter and a $\hbox{2}$ -D Metal-Grid Filter

Shawn-Yu Lin, T. A. Walsh, T. Walsh, 2008, IEEE Transactions on Electron Devices.

Crack-free III-nitride structures (> 3.5 μm) on silicon

F. Shahedipour-Sandvik, P. Suvarna, M. Tungare, 2011 .

HVPE GaN for high power electronic Schottky diodes

R. Metzger, J. Leach, F. Shahedipour-Sandvik, 2013 .

High-temperature metal coating for modification of photonic band edge position

Shawn-Yu Lin, T. Lu, Yong-Sung Kim, 2009 .