Hyeon-deok Lee

发表

Comparative study on the properties of amorphous carbon layers deposited from 1-hexene and propylene for dry etch hard mask application in semiconductor device manufacturing

Ji Hun Park, Seungmoo Lee, D. Byun, 2011 .

Low Dielectric Constant 3MS α-SiC:H as Cu Diffusion Barrier Layer in Cu Dual Damascene Process

Ho-Kyu Kang, H. Oh, Y. Kim, 2001 .

Low temperature annealing behaviors of the titanium films formed by the ionized sputtering process on (001) silicon substrates

Si-young Choi, D. Ko, Eun-Ha Kim, 1999 .

Characteristics of PECVD grown tungsten nitride films as diffusion barrier layers for ULSI DRAM applications

Sang In Lee, U. Chung, D. Ko, 1997 .

Electrical characterization of CVD TiN upper electrode for Ta/sub 2/O/sub 5/ capacitor

Uin Chung, Y. Koh, Moonyong Lee, 1996 .

Interfacial reaction in the poly-Si/Ta2O5/TiN capacitor system

Robert Sinclair, Hyeon-deok Lee, R. Sinclair, 1998 .

Low Damage In Situ Contact Cleaning Method by a Highly Dense and Directional ECR Plasma

I. Park, G. Choi, Hyeon-deok Lee, 1995 .

Preparation and analysis of amorphous carbon films deposited from (C6H12)/Ar/He chemistry for application as the dry etch hard mask in the semiconductor manufacturing process

Seungmoo Lee, D. Byun, J. Won, 2011 .