M. Lee

Hetero-Tunnel Field-Effect-Transistors With Epitaxially Grown Germanium on Silicon

M. Lee, Jhe-Cyun Lin, C. Kao, 2013, IEEE Transactions on Electron Devices.

Mechanisms of instability retention for ferroelectric field effect transistors with HfZrO2 gate stack scaling down

C.-Y. Liao, V. Hu, K.-Y. Hsiang, 2022, Applied Physics Letters.

Simulation-based study of negative-capacitance double-gate tunnel field-effect transistor with ferroelectric gate stack

Heng-Yuan Lee, M. Liao, Pang-Shiu Chen, 2016 .

Endurance > 1011 Cycling of 3D GAA Nanosheet Ferroelectric FET with Stacked HfZrO2 to Homogenize Corner Field Toward Mitigate Dead Zone for High-Density eNVM

C.-Y. Liao, K.-Y. Hsiang, M. Lee, 2022, 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).

Ferroelectricity of HfZrO2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors

Heng-Yuan Lee, Ming-Jinn Tsai, Yu-Lun Chueh, 2015, IEEE Journal of the Electron Devices Society.

Temperature dependence of the electron-hole-plasma electroluminescence from metal-oxide-silicon tunneling diodes

Miin-Jang Chen, Ching-Fuh Lin, I. Lin, 2000 .