P. Chatterjee

发表

Calculations of the Properties of Superconducting Alloys via the AverageT-Matrix Approximation. An Application to the Binary Substitutional NbMo Alloy System

P. Chatterjee, 1980 .

Superconducting and optical properties of α-zirconium from its augmented-plane-wave band structure

P. Chatterjee, 1984 .

Superconducting Properties of the Hexagonal-Close-Packed Alloy System TcZr

P. Chatterjee, 1984, August 1.

Electron–phonon coupling constant and critical temperature of some A15 superconducting compounds of Nb and V

S. Chatterjee, S. Chatterjee, P. Chatterjee, 1978 .

Photoluminescence study of native defects in annealed GaAs

B. Streetman, M. Durschlag, K. Vaidyanathan, 1975 .

Computer analysis of a-Si:H p-i-n solar cells with a hydrogenated microcrystalline silicon p layer

P. Chatterjee, N. Palit, 1999 .

TCAD simulation of radiation hard n-MCz and n-Fz Si microstrip detector for the HL-LHC

A. Srivastava, P. Chatterjee, N. Saini, 2022, Journal of Instrumentation.

Investigation of mixed irradiation effects in p-MCz thin silicon microstrip detector for the HL-LHC experiments

A. Srivastava, P. Chatterjee, N. Saini, 2022, Journal of Instrumentation.

Improved resistive switching performance of graphene oxide-based flexible ReRAM with HfOx buffer layer

V. Dhanak, S. Chatterjee, R. Mahapatra, 2021, Journal of Materials Science: Materials in Electronics.

The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures

R. Vanderhaghen, B. Equer, P. Chatterjee, 2000 .

Experimental study and modeling of reverse-bias dark currents in PIN structures using amorphous and polymorphous silicon

P. Cabarrocas, S. Tchakarov, U. Dutta, 2003 .

Impurity Distribution of Ion-Implanted Be in GaAs by Sims, Photoluminescence, and Electrical Profiling

W. Mclevige, B. Streetman, J. Comas, 1977 .

Electrical and Photoluminescence Properties of Be-Implanted GaAs and GaAs0.62P0.38

W. Mclevige, B. Streetman, K. Vaidyanathan, 1977 .

Carrier transport and sensitivity issues in heterojunction with intrinsic thin layer solar cells on N-type crystalline silicon: A computer simulation study

C. Ballif, M. Rahmouni, P. Cabarrocas, 2010 .

Electronic, superconducting, and optical properties of technetium from its augmented-plane-wave band structure

P. Chatterjee, 1983 .

Modelling of experimentally measured optical characteristics of ITO/TiO2 transparent multi-layer heat shields

S. Ray, R. Das, U. Dutta, 2007 .

Computer Modeling of Heterojunction with Intrinsic Thin Layer “HIT” Solar Cells: Sensitivity Issues and Insights Gained

P. Chatterjee, A. Datta, 2011 .

Silicon epitaxy below 200°C: towards thin crystalline solar cells

R. Cariou, R. Ruggeri, P. Chatterjee, 2012, Other Conferences.

Towards 12% stabilised efficiency in single junction polymorphous silicon solar cells: experimental developments and model predictions

P. Cabarrocas, S. Abolmasov, P. Chatterjee, 2016 .

Criteria for improved open-circuit voltage in a-Si :H(N)/c-Si(P) front heterojunction with intrinsic thin layer solar cells

P. Cabarrocas, J. Damon-Lacoste, P. Chatterjee, 2008 .

The open circuit voltage in amorphous silicon p-i-n solar cells and its relationship to material, device and dark diode parameters

U. Dutta, P. Chatterjee, 2004 .

High‐field transport of holes in silicon

Jeffrey Frey, J. Frey, P. Chatterjee, 1981 .

PHOTOVOLTAIC PERFORMANCE OF A-SI:H HOMOJUNCTION P-I-N SOLAR CELLS : A COMPUTER SIMULATION STUDY

P. Chatterjee, P. Chatterjee, 1994 .

Influence of N-type μc-SiOx:H intermediate reflector and top cell material properties on the electrical performance of “micromorph” tandem solar cells

P. Cabarrocas, P. Chatterjee, 2018 .

Feasibility of using thin crystalline silicon films epitaxially grown at 165 °C in solar cells: A computer simulation study

S. Chakraborty, R. Cariou, P. Cabarrocas, 2013 .