David J. Roulston

发表

BIPOLAR TRANSISTOR BASE BANDGAP GRADING FOR MINIMUM DELAY

J. M. McGregor, T. Manku, David J. Roulston, 1991 .

Pump power calculation for parametric diodes with variable series resistance

David J. Roulston, J. C. Tandon, 1974 .

Optimum collector EPI-thickness of advanced bipolar transistors for high speed and high current operation

David J. Roulston, M.Jagadesh Kumar, 1994 .

Analytic results for the base region of bipolar transistors based on computer simulations

David J. Roulston, Ulrike Zugelder, 1987 .

Statistical collector implant optimization for BiCMOS using fast, predictive bipolar device simulation and response surface techniques

David J. Roulston, James R. Parker, 1994 .

Computation of the base resistance of bipolar transistors from layout details including quasi three-dimensional effects

David J. Roulston, François Hébert, 1988 .

A new numerical method for quasi-three-dimensional small-signal simulation of silicon bipolar transistors

David J. Roulston, A. D. Sadovnikov, 1997 .

Bipolar Semiconductor Devices

David J. Roulston, D. Roulston, 1990 .

Numerical and analytical calculation of collector buried layer resistance in a bipolar transistor

D. Celi, David J. Roulston, A. D. Sadovnikov, 1995 .

Base component of gain and delay time in base-implanted bipolar transistors☆

David J. Roulston, M. I. Elmasry, M. Elmasry, 1981 .

High-frequency performance of non-conventional-geometry bipolar transistors

David J. Roulston, François Hébert, 1986 .

The effect of sidewall base injection on the a.c. base resistance of a bipolar transistor

David J. Roulston, A. D. Sadovnikov, 1993 .

Partitioned-charge-based BJT model using transient charge control relations for arbitrary doping and bias conditions

David J. Roulston, J. R. Parker, J. S. Hamel, 1993 .

Base resistance of bipolar transistors from layout details including two dimensional effects at low currents and low frequencies

David J. Roulston, François Hébert, 1988 .

Computed noise performance of optimized JFETs as front ends in fiber-optic preamplifiers

David J. Roulston, Alan G. Solheim, 1988 .

Drift hole mobility in strained and unstrained doped Si/sub 1-x/Ge/sub x/ alloys

J. M. McGregor, T. Manku, David J. Roulston, 1993 .

Recombination dependent characteristics of silicon P+−N−N+ epitaxial diodes

David J. Roulston, K. Venkateswaran, 1972 .

Simplified computer-aided analysis of double-diffused transistors including two-dimensional high-level effects

David J. Roulston, S. G. Chamberlain, J. Sehgal, 1972 .

RETRACTION : BIPOLAR TRANSISTOR BASE BANDGAP GRADING FOR MINIMUM DELAY

J. M. McGregor, T. Manku, David J. Roulston, 1992 .

A simple expression for ECL propagation delay including non-quasi-static effects

J. M. McGregor, David J. Roulston, S. C. Jain, 1993 .

IC vs VBE law in double diffused bipolar transistors

David J. Roulston, 1975 .

Effective recombination velocity of low-high junctions

David J. Roulston, C. R. Selvakumar, S. C. Jain, 1988 .

Comparison of avalanche photodiode and photoparametric upconverter signal-to-noise ratio

David J. Roulston, J. C. Tandon, 1973 .

IC-VCE characteristics of double diffused bipolar transistors under low level injection

David J. Roulston, D. Roulston, D. Scott, 1980 .

Polysilicon emitter bipolar transistors

David J. Roulston, Ashok K. Kapoor, A. Kapoor, 1989 .

Design study of AlGaAs/GaAs HBTs

David J. Roulston, H. Morkoc, H. Morkoç, 1990 .

Turn-off transient behaviour of p- i- n diodes

David J. Roulston, R. C. Varshney, 1971 .

BAND-GAP NARROWING IN NOVEL III-V SEMICONDUCTORS

J. M. McGregor, David J. Roulston, S. C. Jain, 1990 .

A simple expression for band gap narrowing (BGN) in heavily doped Si, Ge, GaAs and GexSi1−x strained layers

David J. Roulston, S. C. Jain, D. Roulston, 1991 .