A. V. Dvurechenskii

Hole transport in Ge/Si quantum dot field-effect transistors

Andrei I. Yakimov, A. V. Dvurechenskii, V. V. Kirienko, 2003, Saratov Fall Meeting.

Raman scattering diagnostics of as grown and pulsed laser modified Ge-Si nanostructures with quantum dots

M. D. Efremov, Vladimir A. Volodin, A. V. Dvurechenskii, 2007, International Conference on Coherent and Nonlinear Optics.

The transition from strong to weak localization in two-dimensional array of Ge/Si quantum dots

A. V. Dvurechenskii, A. I. Nikiforov, N. P. Stepina, 2009, Microelectron. J..

Dark current blocking in semiconductors with one-type conduction

A. V. Dvurechenskii, A. P. Kovchavtzev, G. L. Kurychev, 2000, Other Conferences.

Influence of pulsed laser annealing on the properties of Ge quantum dots in Si matrix

M. D. Efremov, Vladimir A. Volodin, A. V. Dvurechenskii, 2008, High-Power Laser Ablation.

Hole states in vertically coupled double Ge/Si quantum dots

A. V. Dvurechenskii, A. I. Yakimov, A. I. Nikiforov, 2009, Microelectron. J..

Midinfrared photoresponse of Ge quantum dots on a strained Si0.65Ge0.35 layer

A. V. Dvurechenskii, V. V. Kirienko, A. I. Nikiforov, 2011 .

Plasmon polariton enhanced mid-infrared photodetectors based on Ge quantum dots in Si

A. V. Dvurechenskii, V. V. Kirienko, V. A. Armbrister, 2017 .

Nucleation sites of Ge nanoislands grown on pit-patterned Si substrate prepared by electron-beam lithography

A. V. Dvurechenskii, P. L. Novikov, Zh. V. Smagina, 2018 .

Stark effect in type-II Ge/Si quantum dots

Alexander G. Milekhin, Dietrich R. T. Zahn, A. V. Dvurechenskii, 2003 .