M. Akita

发表

Measurement of Frequency Dispersion of AlGaN/GaN High Electron Mobility Transistors

S. Kishimoto, T. Mizutani, Y. Ohno, 2003 .

Evaluation of effective electron velocity in AlGaN/GaN HEMTs

S. Kishimoto, T. Mizutani, K. Maezawa, 2000 .

Temperature Dependence of High‐Frequency Performances of AlGaN/GaN HEMTs

T. Mizutani, K. Kishimoto, M. Akita, 2001 .

Current Collapse in AlGaN/GaN HEMTs Investigated by Electrical and Optical Characterizations

Yutaka Ohno, Koichi Maezawa, Takashi Mizutani, 2002 .

AlGaN/GaN Heterostructure Metal-Insulator-Semiconductor High-Electron-Mobility Transistors with Si3N4 Gate Insulator

Yutaka Ohno, Takashi Mizutani, Shigeru Kishimoto, 2003 .

Temperature Distribution Measurement in AlGaN/GaN High-Electron-Mobility Transistors by Micro-Raman Scattering Spectroscopy

S. Kishimoto, T. Mizutani, Y. Ohno, 2002 .

A study on current collapse in AlGaN/GaN HEMTs induced by bias stress

Yutaka Ohno, Koichi Maezawa, Takashi Mizutani, 2003 .

High-frequency measurements of AlGaN/GaN HEMTs at high temperatures

T. Mizutani, S. Kishimoto, T. Mizutani, 2001, IEEE Electron Device Letters.