J. Yin

发表

Influence of drain bias on the electron mobility in AlGaN/AlN/GaN heterostructure field-effect transistors

Zhaojun Lin, S. Cai, S. Dun, 2013 .

Design and DC parameter extraction of the high linearity Al0.27Ga0.73N/AlN/Al0.04Ga0.96N/GaN HEMT

Zhiqun Cheng, Jianbo Song, Zhihong Feng, 2011, 2011 International Conference on Electronics, Communications and Control (ICECC).

Study of millimeter wave ALGaN/AlN/GaN HEMT

Zhiqun Cheng, Jianbo Song, Zhihong Feng, 2011, 2011 International Conference on Electronics, Communications and Control (ICECC).

Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Zhaojun Lin, S. Cai, T. Han, 2014 .

Directly extracting both threshold voltage and series resistance from the conductance—voltage curve of an AlGaN/GaN Schottky diode

Zhaojun Lin, S. Cai, T. Han, 2013 .

Influence of inlet structures of planetary reactor on gas reaction path in AlN-MOVPE process

Ran Zuo, Zhihong Feng, Yanmin Guo, 2021 .

Trap behaviors in AlGaN–GaN heterostructures by C–V characterization

Wei Zhou, Zhihong Feng, Bo Liu, 2009 .

Influence of the Strain of AlN Buffer Layer on the Strain Evolution of GaN Epilayer Grown on 3-in 6H-SiC Substrate

Zhi-hong Feng, Yulong Fang, J. Yin, 2011 .

Reliability Assessment of InAlN/GaN HFETs With Lifetime $8.9\times 10^{\mathrm {6}}$ h

S. Cai, Y. Lv, Zhihong Feng, 2017, IEEE Electron Device Letters.

Improved structural quality of AlN grown on sapphire by 3D/2D alternation growth

Weili Lu, Jia Li, Zhihong Feng, 2017 .

High electron mobility and low sheet resistance in lattice-matched AlInN/AlN/GaN/AlN/GaN double-channel heterostructure

Zhihong Feng, Meicheng Li, Jiayun Yin, 2009 .

Highly uniform sheet resistance of the double-channel AlInN/GaN heterostructure

Sam Zhang, Zhihong Feng, Mei-cheng Li, 2010 .

10-GHz 4.69-W/mm InAlN/GaN HFET on sapphire substrate

S. Cai, S. Dun, Zhihong Feng, 2012 .

Different influences of Schottky metal on the strain and relative permittivity of barrier layer between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

Zhaojun Lin, S. Cai, T. Han, 2014 .

High performance AlGaN/GaN HEMTs with AlN/SiNx passivation*

Guodong Gu, Li Wang, Xin Tan, 2015 .

Excellent-Performance AlGaN/GaN Fin-MOSHEMTs with Self-Aligned Al 2 O 3 Gate Dielectric

Y. Lv, Zhihong Feng, Xubo Song, 2016 .

Micro‐Raman spectroscopy observation of field‐induced strain relaxation in AlGaN/GaN heterojunction field‐effect transistors

S. Cai, Yang Jiang, S. Dun, 2012 .

Low ohmic contact AlN/GaN HEMTs grown by MOCVD

Tingting Han, Peng Xu, Guodong Gu, 2013 .

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Yuanjie Lü, Shaobo Dun, Bo Liu, 2014 .

Trap behaviors in AlGaN/GaN based polarization-doped field effect transistors by frequency-dependent conductance–voltage characterizations

S. Cai, Jianchao Guo, Chengming Li, 2015 .

The effects of V/III ratio on nonpolar a-plane GaN films grown on r-plane sapphire by MOCVD

C. Chen, J. Dai, Z. H. Wu, 2011 .

Triangular Defects Reduction and Uniformity Improvement of 4H-SiC Epitaxial Growth in a Planetary Reactor

Jia Li, Zhihong Feng, Yulong Fang, 2018, Materials Science Forum.

AlGaN/GaN Polarization-Doped Field-Effect Transistors With Graded Heterostructure

S. Cai, Chengming Li, Y. Lv, 2014, IEEE Transactions on Electron Devices.

High-Temperature Performance Analysis of AlGaN/GaN Polarization Doped Field Effect Transistors Based on the Quasi-Multi-Channel Model

S. Cai, Chengming Li, Y. Lv, 2015 .