S. Cai 蔡

Performance analysis of GaN-based high-electron-mobility transistors with postpassivation plasma treatment

X. Zhou 周, X. Tan 谭, Y. Lv 吕, 2020, Chinese Physics B.

Extrinsic and intrinsic causes of the electrical degradation of AlGaN/GaN high electron mobility transistors

S. Cai 蔡, B. Liu 刘, Y. Fang 房, 2012 .

Self-aligned graphene field-effect transistors on SiC (0001) substrates with self-oxidized gate dielectric

Z. Feng 冯, S. Cai 蔡, L. Wang 王, 2014 .

Unstrained InAlN/GaN heterostructures grown on sapphire substrates by MOCVD

Z. Feng 冯, S. Cai 蔡, Y. Lü 吕, 2014 .

Robust Magnetism Against Pressure in Non-Superconducting Samples Prepared from Lutetium Foil and H2/N2 Gas Mixture

T. Xiang, Wenge Yang, H. Mao, 2023, Chinese Physics Letters.