Caiyu Wang

Breakdown Voltage Enhancement in ScAlN/GaN High-Electron-Mobility Transistors by High-k Bismuth Zinc Niobate Oxide

E. Beam, Cathy Lee, S. Rajan, 2021, IEEE Transactions on Electron Devices.

Electron transport of perovskite oxide BaSnO3 on (110) DyScO3 substrate with channel-recess for ferroelectric field effect transistors

S. Stemmer, S. Rajan, W. Lu, 2021 .

Metal/BaTiO3/β-Ga2O3 dielectric heterojunction diode with 5.7 MV/cm breakdown field

S. Ringel, S. Rajan, A. Arehart, 2019, Applied Physics Letters.

Demonstration of Wide Bandgap AlGaN/GaN Negative‐Capacitance High‐Electron‐Mobility Transistors (NC‐HEMTs) Using Barium Titanate Ferroelectric Gates

S. Rajan, Hareesh Chandrasekar, K. Majumdar, 2020, Advanced Electronic Materials.

BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm

S. Rajan, W. Lu, Asif Khan, 2020 .

Design of Transistors Using High-Permittivity Materials

S. Stemmer, S. Rajan, Zhanbo Xia, 2019, IEEE Transactions on Electron Devices.

High-permittivity dielectric edge termination for vertical high voltage devices

S. Rajan, Zhanbo Xia, N. K. Kalarickal, 2020, Journal of Computational Electronics.