J. Oh

发表

SiNx Prepassivation of AlGaN/GaN High-Electron-Mobility Transistors Using Remote-Mode Plasma-Enhanced Chemical Vapor Deposition

K. Seo, H. Cha, J. Her, 2010 .

Photo-Electrochemical Gate Recess Etching for the Fabrication of AlGaN/GaN Heterostructure Field Effect Transistor : Semiconductors

M. Shin, Jung-Hee Lee, Jaehak Lee, 2001 .

Variable Angle of Incidence Spectroscopic Ellipsometric Measurement of the Franz-Keloysh Effect in Modfet Structures

P. G. Snyder, J. Woollam, J. Oh, 1986 .

Ellipsometric analysis of built‐in electric fields in semiconductor heterostructures

P. G. Snyder, R. E. Owens, J. Woollam, 1987 .

Improved Schottky behavior of GaN nanorods using hydrogen plasma treatment

N. H. Hai, Maddaka Reddeppa, Byung-Guon Park, 2017 .

Effects of reduced internal electric field in InGaN/pseudo-AlInGaN multi-quantum-well on forward leakage current and photocurrent properties

Byung-Guon Park, Moon-Deock Kim, Koteswara Rao Peta, 2019, Journal of Applied Physics.

Interactions of amorphous TaxCu1−x (x=0.93 and 0.80) alloy films with Au overlayers and GaAs substrates

J. Woollam, J. Pouch, J. Oh, 1987 .

Control of polarity and defects in the growth of AlN films on Si (111) surfaces by inserting an Al interlayer

S. H. Kim, Woochul Yang, Byung-Guon Park, 2012 .

Structural and optical properties of GaN/AlGaN multiquantum wells with an AlGaN insertion monolayer in the GaN well

Chang Soo Kim, H. Im, T. Kang, 2005 .

Thickness effects of Al0.5Ga0.5N barriers on the optical properties of δ-AlGaN-inserted GaN-coupled multiquantum wells

T. Kang, S. J. Lee, Y. S. Park, 2005 .

Blue-light emission from molecular-beam-epitaxially grown GaN/Al0.5Ga0.5N multiple quantum wells with a perturbating layer of Al0.5Ga0.5N monolayers

Seung-Ho Lee, T. Kang, Y. S. Park, 2004 .

Growth of low defect AlGaSb films on Si (1 0 0) using AlSb and InSb quantum dots intermediate layers

Young Heon Kim, Moon-Deock Kim, W. Yang, 2011 .

Thermal and structural stability of cosputtered amorphous Ta(x)Cu(1-x) alloy thin films on GaAs

D. Sellmyer, J. Woollam, J. Pouch, 1986 .

Thickness dependence of temperature-induced emission mechanism in InGaN/AlGaN short-period superlattices

Moon-Deock Kim, Y. Noh, Jeongwook Seo, 2012 .

Deposition and Electrical Properties of Al 2 O 3 와 HfO 2 Films Deposited by a New Technique of Proximity-Scan ALD (PS-ALD)

Mi-Young Lee, J. Oh, Y. Kwon, 2008 .

Schottky barrier height enhancement for In/sub 0.52/AlAs layer by using in-situ Ar plasma pre-treatment and its application to In/sub 0.52/AlAs/In/sub 0.53/GaAs/InP HEMT's

Daehyun Kim, K. Seo, Young Ho Kim, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Room temperature operating infrared (8-12 /spl mu/m) photodetector with InAs quantum dots in modulation doped heterostructures

Songcheol Hong, Jong-Wook Kim, J. Oh, 1998 .

Thermally stable ternary titanium-tantalum silicide formation on polycrystalline silicon

Sung-Goon Kang, T. Shim, J. Lee, 1993 .

Study of Mo-, Au-, and Ni-implanted molybdenum laser mirrors by multiple angle of incidence spectroscopic ellipsometry

P. G. Snyder, D. Aspnes, D. Ingram, 1986 .

Analysis of electrical properties and deep level defects in undoped GaN Schottky barrier diode

V. R. Reddy, Tae Geun Kim, Byung-Guon Park, 2013 .

Effect of carbon black on self-crosslinking network structure of polychloroprene rubber and epoxidized natural rubber blends

K. Chung, Yonghong Wang, J. Oh, 2017 .

Effect of topography on the wetting of nanoscale patterns: experimental and modeling studies.

Il-Joo Cho, E. Yoon, H. Grewal, 2014, Nanoscale.

Growth mechanisms and structural properties of self-assembled AlSb quantum dots on a Si(100) substrate

S. Kim, Tae Geun Kim, Jeongyong Lee, 2007 .

Characteristics of GaN epilayer grown on Al2O3 with AlN buffer layer by molecular beam epitaxy

Hee Chang Jeon, J. H. Na, T. Kang, 2003 .

Optical and crystal properties of ammonia MBE-grown GaN layers on plasma-assisted MBE-grown AlN/Si (110) substrates

Moon-Deock Kim, Chul-Hyun Park, Y. Noh, 2014 .

Microstructural properties and initial growth behavior of InN nanobats grown on a Si(1 1 1) substrate

Chang Soo Kim, Y. Shin, Yeongho Kim, 2010 .

Room temperature far infrared (8/spl sim/10 μm) photodetectors using self-assembled InAs quantum dots with high detectivity

Tae-Kyung Yoo, Jae-Eung Oh, T. Yoo, 2000 .

A study of the red-shift of a neutral donor bound exciton in GaN nanorods by hydrogenation

Sang‐Kwon Lee, Byung-Guon Park, Moon-Deock Kim, 2017, Nanotechnology.

Ag Nanowire-Plasmonic-Assisted Charge Separation in Hybrid Heterojunctions of Ppy-PEDOT:PSS/GaN Nanorods for Enhanced UV Photodetection.

Byung-Guon Park, Moon-Deock Kim, Koteswara Rao Peta, 2020, ACS applied materials & interfaces.

Highly sensitive g-C3N4 nanosheets as a potential candidate for the effective detection of NO2 gas via langasite based surface acoustic wave gas sensor

Moon-Deock Kim, Song-Gang Kim, Reddeppa Maddaka, 2021, Journal of Materials Chemistry C.

Tribological properties of trichlorosilane-based one- and two-component self-assembled monolayers

E. Yoon, Jinseok Kim, Sungwook Yang, 2008 .

Hydrogen passivation: a proficient strategy to enhance the optical and photoelectrochemical performance of InGaN/GaN single-quantum-well nanorods

Young Heon Kim, Dojin Kim, Maddaka Reddeppa, 2020, Nanotechnology.

Friction and Wear of Nitrogen Incorporated Diamond-like Carbon Films Under a Vacuum

E. Yoon, Kwang-Ryeol Lee, H. Kong, 1995 .

Current–voltage characteristics and deep-level study of GaN nanorod Schottky-diode-based photodetector

Byung-Guon Park, Moon-Deock Kim, Song-Gang Kim, 2021 .

Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy

Moon-Deock Kim, Sang tae Lee, Y. Noh, 2017 .

Influence of an embedded low-temperature AlN strain relaxation layer on the strain states and the buffer characteristics of GaN films grown on (110) Si substrates by using ammonia molecular beam epitaxy

Moon-Deock Kim, Y. Noh, Sang-Tae Lee, 2015 .

Evaluation of frictional characteristics for a pin-on-disk apparatus with different dynamic parameters

Eui-Sung Yoon, Hosung Kong, Jae-Eung Oh, 1997 .

Tribochemical interactions of Si-doped DLC film against steel in sliding contact

E. Yoon, H. Ahn, J. Oh, 2007 .

Electron trap level in a GaN nanorod p-n junction grown by molecular-beam epitaxy

T. Kang, Seung Joo Lee, K. Yoo, 2006 .

Hydrogen passivation effect on the yellow–green emission band and bound exciton in n - ZnO

S. H. Kim, Moon-Deock Kim, Jae–Eung Oh, 2011 .

Efficient Charge Separation in Polypyrrole/GaN‐Nanorod‐Based Hybrid Heterojunctions for High‐Performance Self‐Powered UV Photodetection

Byung-Guon Park, Moon-Deock Kim, Song-Gang Kim, 2021, physica status solidi (RRL) – Rapid Research Letters.

X-Ray Photoelectron Spectroscopy Studies of Titanium Nitride Barrier Metals Prepared by Low-Pressure Metalorganic Chemical Vapor Deposition

S. Paek, Y. H. Chang, S. Won, 1995 .

InP MIS structures with diamondlike amorphous carbon films deposited by ion-beam sputtering and from plasma☆

D. C. Liu, P. G. Snyder, J. Woollam, 1986 .

Analysis of leakage current mechanisms in Pt/Au Schottky contact on Ga-polarity GaN by Frenkel-Poole emission and deep level studies

Byung-Guon Park, Moon-Deock Kim, P. K. Rao, 2011 .

High electron mobility transistors with Fe-doped semi-insulating GaN buffers on (1 1 0) Si substrates grown by ammonia molecular beam epitaxy

Moon-Deock Kim, Y. Noh, Sang-Tae Lee, 2019, Journal of Crystal Growth.

Microstructural properties of GaN grown on a Si(110) substrate by gas-source molecular beam epitaxy: Dependence on the ammonia flux

S. Ahn, Jong Hoon Lee, Y. Noh, 2015 .

Nanomechanical measurement of astrocyte stiffness correlated with cytoskeletal maturation.

Il-Joo Cho, E. Yoon, Thi‐Huong Nguyen, 2015, Journal of biomedical materials research. Part A.

Normally-Off MOS-HFET on AlGaN/GaN-on-Si(110) Grown by NH3 MBE

K. Seo, H. Cha, Seung-Hwan Kim, 2016, IEEE Electron Device Letters.

Enhanced quantum-confined Stark effect of vertically coupled quantum dots at room temperature

Jong-Wook Kim, Yong-Hee Lee, J. Oh, 2000, CLEO 2000.

Influence of p-GaN shape on the light emission characteristics of InGaN nanodisk embedded p-i-n GaN nanorods

R. S. Kumar, Byung-Guon Park, Moon-Deock Kim, 2015 .

Fabrication and properties of magnetorheological elastomers based on CR/ENR self-crosslinking blends

Xinru Zhang, K. Chung, Yonghong Wang, 2015 .

Microstructural properties and dislocation evolution on a GaN grown on patterned sapphire substrate: A transmission electron microscopy study

Young Heon Kim, Jae-Eung Oh, H. Ruh, 2010 .

Temperature-dependent electrical properties of (Pt/Au)/Ga-polarity GaN/Si(111) Schottky diode

Byung-Guon Park, Moon-Deock Kim, Koteswara Rao Peta, 2012 .

Deep Level Defects in AlxGa1-xN/GaN Heterointerfaces Grown by Molecular Beam Epitaxy

Tae Whan Kim, T. Kang, H. Cho, 2007 .

Microwave performance of recessed gate Al0.2Ga0.8N/GaN HFETs fabricated using a photoelectrochemical etching technique ☆

M. Shin, Jung-Hee Lee, Jae-Seung Lee, 2002 .

Deep level defects in Ga- and N-polarity GaN grown by molecular beam epitaxy on si(111)

Tae Geun Kim, Jae-Eung Oh, S. H. Kim, 2013 .

Enhanced Schottky Gate and Pulsed IV Characteristics of AlGaN-GaN HEMT on Si with Gate-annealing and SiNX Passivation

M. Han, K. Seo, Gyungseon Seol, 2006, 2006 European Microwave Integrated Circuits Conference.

Deep level defects in Si-doped AlxGa1−xN films grown by molecular-beam epitaxy

T. Kang, H. Cho, C. M. Park, 2005 .

Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layer

Hyungsang Kim, T. Kang, J. Oh, 2000 .

Direct Observation of Strong Quantum-Confined Stark Effect in Vertically-Stacked Quantum Dots at Room Temperature

Jong-Wook Kim, Yong-Hee Lee, J. Oh, 2000 .

Self-assembled GaN nano-rods grown directly on (111) Si substrates : Dependence on growth conditions

Seung-Ho Lee, T. Kang, Y. S. Park, 2005 .

The growth and characterization of an InN layer on AlN/Si (1 1 1)

S. Kim, Moon-Deock Kim, Seong-eun Park, 2009 .

Polarity determination for GaN/AlGaN/GaN heterostructures grown on (0001) sapphire by molecular beam epitaxy

Heesoo Kim, T. Kang, Y. S. Park, 2003 .

Structural and Optical Properties of GaSb Films Grown on AlSb/Si (100) by Insertion of a Thin GaSb Interlayer Grown at a Low Temperature

Moon-Deock Kim, W. Yang, Y. Noh, 2010 .

Young Heon Kim, Jeong Yong Lee, H. Lee, 2005 .

Remote Plasma-Assisted Metal Organic Chemical Vapor Deposition of Tantalum Nitride Thin Films with Different Radicals

K. Noh, Sang-In Lee, J. Oh, 1998 .

The growth of a low defect InAs HEMT structure on Si by using an AlGaSb buffer layer containing InSb quantum dots for dislocation termination

Moon-Deock Kim, Y. Noh, Sang-Tae Lee, 2009, Nanotechnology.

Influence of Pinhole‐Type Defects in AlGaN on rf Performance of AlGaN/GaN HFETs Grown by MOCVD

Jae-Hoon Lee, M. Shin, Jung-Hee Lee, 2001 .

Dependence of the AlSb buffers on GaSb/GaAs(0 0 1) heterostructures

Junyeong Lee, Yumi Kwon, Young Heon Kim, 2007 .