Xing Zhang

Transmission electron microscopy investigation of inversion domain boundary in Al0.65Ga0.35N grown on AlN/sapphire template

Z. J. Yang, Xiaodong Wang, L. Sang, 2009 .

Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

Z. J. Yang, Jianbin Xu, Sen Huang, 2008 .

Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

Z. J. Yang, C. C. Huang, Xiaodong Wang, 2010 .

The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

Z. J. Yang, C. C. Huang, Xiaodong Wang, 2009 .

Reduction in threading dislocation densities in AlN epilayer by introducing a pulsed atomic-layer epitaxial buffer layer

L. Sang, Z. Qin, T. Dai, 2008 .

Morphology of threading dislocations in high-resistivity GaN films observed by transmission electron microscopy

Feng Xu, Z. J. Yang, Jianbin Xu, 2007 .