Z. Miao

Microstructure and origin of dislocation etch pits in GaN epilayers grown by metal organic chemical vapor deposition

Z. J. Yang, Jianbin Xu, Sen Huang, 2008 .

Ni diffusion and its influence on electrical properties of AlxGa1−xN∕GaN heterostructures

Z. J. Yang, Yangyuan Wang, Sen Huang, 2008 .

Morphology and microstructure evolution of Al x Ga 1-x N epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy

Z. J. Yang, Sen Huang, Z. Qin, 2008 .

Morphology and microstructure evolution of AlxGa1-xN epilayers grown on GaN/sapphire templates with AlN interlayers observed by transmission electron microscopy

Z. Qin, L. Lu, B. Shen, 2008, 2008 9th International Conference on Solid-State and Integrated-Circuit Technology.

Mechanical properties of AlxGa1−xN films with high Al composition grown on AlN/sapphire templates

Z. J. Yang, Z. Qin, G. Y. Zhang, 2007 .

Strain effects on InxAl1−xN crystalline quality grown on GaN templates by metalorganic chemical vapor deposition

Z. J. Yang, C. C. Huang, Xiaodong Wang, 2010 .

The origin and evolution of V-defects in InxAl1−xN epilayers grown by metalorganic chemical vapor deposition

Z. J. Yang, C. C. Huang, Xiaodong Wang, 2009 .

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Feng Xu, Z. J. Yang, Hajime Okumura, 2010 .

The influence of indium surfactant on the electrical properties of GaN epilayers grown by metal-organic chemical vapour deposition

Y. Wang, H. Okumura, F. J. Xu, 2010 .

Study of the leakage current mechanism in Schottky contacts to Al0.25Ga0.75N/GaN heterostructures with AlN interlayers

L. Sang, Sen Huang, Z. Qin, 2009 .