X. Huang

发表

Characterization of 3C-SiC Films Grown on 4H- and 6H-SiC Substrate Mesas during Step-Free Surface Hetero-Epitaxy

P. Neudeck, M. Skowronski, M. Dudley, 2003 .

Characterization of SiC using Synchrotron White Beam X-ray Topography

M. Dudley, X. Huang, 2000 .

Direct evidence of micropipe-related pure superscrew dislocations in SiC

C. Carter, M. Dudley, W. Vetter, 1999 .

X-RAY DIFFRACTION MEASUREMENT OF DOPING-INDUCED LATTICE MISMATCH IN N-TYPE 4H-SIC EPILAYERS GROWN ON P-TYPE SUBSTRATES

M. Dudley, R. Okojie, T. Holzheu, 2003 .

Silicon Carbide Crystals — Part I: Growth and Characterization

M. Dudley, V. Prasad, R. Ma, 2003 .

The mechanism of micropipe nucleation at inclusions in silicon carbide

A. Powell, P. Neudeck, M. Skowronski, 1999 .

Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN

R. Davis, M. Dudley, J. Bai, 2005 .

Characterization of SiC Epitaxial Structures using High-Resolution X-Ray Diffraction Techniques

P. Neudeck, M. Dudley, R. Okojie, 2004 .

The influence of polarity on twinning in zincblende structure crystals : new insights from a study of magnetic liquid encapsulated, Czochralski grown InP single crystals

Balaji Raghothamachar, Michael Dudley, David Bliss, 1998 .

High-resolution TEM observation of AlN grown on on-axis and off-cut SiC substrates

M. Dudley, J. Bai, X. Huang, 2006 .

Assessing the quality of x-ray optic surfaces of Si crystals cut by diamond-wire and rotating-blade sawing techniques.

A. Macrander, J. Maj, J. Qian, 2008 .

Stresses experienced by AlN films grown on sapphire

M. Khan, J. Lin, Hongxing Jiang, 2005 .

Synchrotron White Beam X-Ray Topography and High Resolution X-RayDiffraction Studies of Defects in SiC Substrates, Epilayers and Device Structures

M. Dudley, W. Vetter, X. Huang, 2004 .

Assessment of orientation and extinction contrast contributions to the direct dislocation image

M. Dudley, X. Huang, W. Huang, 1999 .

Synchrotron white beam X-ray topography, transmission electron microscopy and high-resolution X-ray diffraction studies of defects and strain relaxation processes in wide band gap semiconductor crystals and thin films

M. Dudley, B. Raghothamachar, G. Dhanaraj, 2006 .

Effects of Structural Defects on Diode Properties in 4H-SiC

M. Dudley, B. Skromme, S. Mahajan, 2002 .

Characterization of Single-Crystal 3C-SIC Epitaxial Layers on SI Substrates

S. Saddow, M. Dudley, Y. Lo, 1998 .

Electrical characterization of single barrier GaAs/GaN/GaAs heterostructures

C. T. Foxon, L. Eaves, T. Foster, 1995 .

Contrast Mechanism in Superscrew Dislocation Images on Synchrotron Back-Reflection Topographs

C. Carter, M. Dudley, W. Vetter, 1998 .

Characterization of SiC epilayers using high-resolution X-ray diffraction and synchrotron topography imaging

M. Dudley, R. Okojie, X. Huang, 2004 .

Synchrotron White Beam X-Ray Topography and High Resolution Triple Axis X-Ray Diffraction Studies of Defects in SiC Substrates, Epilayers and Devices

P. Neudeck, M. Dudley, W. Vetter, 2003 .