Satoru Ohshima

发表

A proposal for CVD growth of 15R-SiC by observing the etch pits on 15R-SiC (0 0 0 1̄) C-face

S. Nishino, T. Nishiguchi, Y. Masuda, 2002 .

Structural Analysis of (211) 3C-SiC on (211) Si Substrates Grown by Chemical Vapor Deposition

S. Nishino, K. Nishio, T. Isshiki, 2004 .

Epitaxial Growth of 3C-SiC on T-shape columnar Si Substrates

A. Shoji, S. Nishino, T. Nishiguchi, 2004 .

Microstructures in the Pendeo Epitaxial Layer of 3C-SiC on Si Substrate

A. Shoji, S. Nishino, T. Isshiki, 2005 .

Pendeo Epitaxial Growth of 3C-SiC on Si Substrates

A. Shoji, S. Nishino, T. Nishiguchi, 2004 .

Epitaxial Growth of 2 inch 3C-SiC on Si Substrates by Atmospheric Hot Wall CVD

A. Shoji, S. Nishino, Jiliang Zhu, 2004 .

Bulk crystal growth of cubic silicon carbide by sublimation epitaxy

S. Nishino, M. Sasaki, Tomoaki Furusho, 2003 .

Reduction of Hollow Defects in 6H-SiC Single Crystals Grown by Sublimation Boule Growth Technique on (1120) 6H-SiC Substrates

S. Nishino, T. Nishiguchi, Y. Masuda, 2004 .

Influence of Substrate Roughness on the Formation of Defects in 3C-SiC Grown on Si(110) Substrate by Hetero-Epitaxial CVD Method

S. Nishino, K. Nishio, T. Isshiki, 2005 .

Suppression of the Twin Formation in CVD Growth of (111) 3C-SiC on (110) Si Substrate

S. Nishino, K. Nishio, T. Isshiki, 2005 .

Suppression Mechanism of Double Positioning Growth in 3C-SiC(111) Crystal by Using an Off-Axis Si(110) Substrate

S. Nishino, K. Nishio, T. Isshiki, 2005 .

CVD growth of 3C–SiC on various orientations of Si substrates for the substrate of nitride semiconductors

S. Nishino, T. Nishiguchi, Satoru Ohshima, 2003 .

Gaseous Etching Effects on Homoepitaxial Growth of SiC on Hemispherical Substrates Using CVD

S. Nishino, C. Jacob, Y. Masuda, 2001 .

Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System

S. Nishino, C. Jacob, Y. Masuda, 2001 .

Crystal growth of silicon carbide in hydrogen atmosphere by sublimation close space technique

S. Nishino, S. Lilov, Tomoaki Furusho, 2002 .

Effect of Tantalum in Crystal Growth of Silicon Carbide by Sublimation Close Space Technique

S. Nishino, S. Lilov, Tomoaki Furusho, 2001 .

Effect of Tantalum in Sublimation Growth of Aluminum Nitride

S. Nishino, Tomoaki Furusho, Satoru Ohshima, 2003 .

Crystal Growth of 6H-SiC(01-14) on 3C-SiC(001) Substrate by Sublimation Epitaxy

S. Nishino, S. Ohta, Tomoaki Furusho, 2004 .

Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC

S. Nishino, T. Nishiguchi, Satoru Ohshima, 2003 .

Micropipe Filling by the Sublimation Close Space Technique

S. Nishino, Tomoaki Furusho, Satoru Ohshima, 2001 .

Selective Epitaxial Growth of Pyramidal 3C-SiC on Patterned Si Substrate

S. Nishino, C. Jacob, Satoru Ohshima, 2002 .

Control of Pendeo Epitaxial Growth of 3C-SiC on Silicon Substrate

S. Nishino, C. Jacob, Satoru Ohshima, 2003 .

Channel Epitaxy of 3C-SiC on Si Substrates by CVD

S. Nishino, C. Jacob, Satoru Ohshima, 2002 .

Preparation of Porous 4H-SiC by Surface Anodization

S. Nishino, Yi Chen, Satoru Ohshima, 2005 .

Temperature Dependence of Sublimation Growth of 6H-SiC on (11-20) Substrates

S. Nishino, T. Nishiguchi, Y. Masuda, 2002 .

Surface Morphology of 6H-SiC on various a-plane using Si 2 Cl 6 +C 3 H 8 +H 2 by Chemical Vapor Deposition

S. Nishino, C. Jacob, Y. Masuda, 2000 .