G. Piao

p-Type InGaN Cap Layer for Normally Off Operation in AlGaN/GaN Heterojunction Field Effect Transistors

M. Shimizu, Y. Yano, M. Inada, 2008 .

Low on‐resistance AlGaN/GaN HEMTs by reducing gate length and source‐gate length

M. Shimizu, H. Okumura, T. Ide, 2008 .