P. Revva

Temperature dependence of the Schottky barrier in Al/AlGaAs metal‐semiconductor junctions

M. Missous, A. Peaker, J. M. Langer, 1993 .

Characterization of the titanium silicon two/Si interface in titanium disilicide films on silicon, formed by deposition of alternate titanium‐silicon layers and annealing

A. Travlos, A. Nassiopoulos, P. Revva, 1994 .

High crystalline quality titanium disilicides formed by sputter deposition of Ti⧹Si multilayers and annealing

A. Kastanas, A. Nassiopoulou, A. Travlos, 1998 .

Reduction of the reverse short channel effect in thick SOI MOSFET's

E. Tsoi, D. Tsoukalas, C. Tsamis, 1997, IEEE Electron Device Letters.