J. Bradshaw

Growth of GaAs‐Al‐GaAs by migration‐enhanced epitaxy

P. Tasker, L. Eastman, W. Schaff, 1988 .

Characterization of GaAs/AlGaAs graded index‐separate confinement heterostructure lasers by Raman scattering

J. Shealy, J. Bradshaw, 1990 .

Characterization by Raman scattering, x‐ray diffraction, and transmission electron microscopy of (AlAs)m(InAs)m short period superlattices grown by migration enhanced epitaxy

J. Shealy, J. Zhu, X. J. Song, 1992 .

Two-photon induced fluorescence behavior of DEANST organic crystal

P. Prasad, G. He, J. Zieba, 1993 .

Use of Raman spectroscopy to examine the effects of growth stops on the interfaces of superlattices grown by molecular beam epitaxy

D. Radulescu, G. Wicks, J. Bradshaw, 1988 .