H. Dämbkes

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

K. Heime, K. Ploog, E. Schubert, 1984 .

EUMA GENERAL ASSEMBLY AND STEERING COMMITTEE 2008

Peter Russer, Roberto Sorrentino, André Vander Vorst, 2008 .

Selectively dopedn-AlxGa1−xAs/GaAs heterostructures with high-mobility two-dimensional electron gas for field effect transistors

K. Heime, K. Ploog, E. Schubert, 1984 .

SiGe HBTs and HFETs

U. Konig, H. Dämbkes, 1995 .

High performance Al0.48In0.52As/Ga0.47In0.53As HFETs

K. Ploog, Yong-Hang Zhang, H. Dämbkes, 1990 .

Field-Effect Transistors with a Two-Dimensional Electron Gas as Channel

K. Heime, H. Dämbkes, 1984 .