Suk-Jin Kim

发表

High Performance of 0.1 5pm Quasi Enhancement-mode (E-mode) Ino.4GaAslIno.4AMs Metamorphic HEMT's on GaAs Substrate Using New Triple-Gate Technology

Daehyun Kim, K. Seo, Hun-Hee Noh, 2004 .

High performance of 0.15/spl mu/m quasi enhancement-mode (E-mode) In/sub 0.4/GaAs/In/sub 0.4/AlAs metamorphic HEMTs on GaAs substrate using new triple-gate technology

Daehyun Kim, K. Seo, K. Chung, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Damage-free SiO/sub 2//SiN/sub x/ side-wall gate process and its application to 40 nm InGaAs/InAlAs HEMT's with 65% InGaAs channel

Daehyun Kim, K. Seo, Young Ho Kim, 2003, International Conference onIndium Phosphide and Related Materials, 2003..

Transport and noise properties of ramp-edge junction

G. Sung, D. Kim, J. Hwang, 2003 .