Jaehak Lee

发表

High Performance of 0.1 5pm Quasi Enhancement-mode (E-mode) Ino.4GaAslIno.4AMs Metamorphic HEMT's on GaAs Substrate Using New Triple-Gate Technology

Daehyun Kim, K. Seo, Hun-Hee Noh, 2004 .

High performance of 0.15/spl mu/m quasi enhancement-mode (E-mode) In/sub 0.4/GaAs/In/sub 0.4/AlAs metamorphic HEMTs on GaAs substrate using new triple-gate technology

Daehyun Kim, K. Seo, K. Chung, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

Suppression of kink phenomenon in ultra-high-speed strained InAs- inserted E-mode HEMTs with a new 0.1 /spl mu/m Y-shaped Pt-buried gate and their impacts on device performance

Daehyun Kim, K. Seo, Tae-Woo Kim, 2004, IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004..

A new two-step recess technology using SiN/sub x/ passivation and Pt-buried gate process and its application to 0.15 /spl mu/m Al/sub 0.6/InAs/In/sub 0.65/GaAs HEMTs

Daehyun Kim, K. Seo, Jaehak Lee, 2004, Conference Digest [Includes 'Late News Papers' volume] Device Research Conference, 2004. 62nd DRC..

High f/sub T/ 0.05/spl mu/m In/sub 0.52/AlAs/In/sub 0.53/GaAs HEMT's with strained 5 nm InAs sub-channel on InP substrate

W. Feng, Jaehak Lee, Xiaogang Xie, 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..

30 nm Triple-Gate In0.7GaAs HEMTs Fabricated by Damage-Free SiO2/SiNx Sidewall Process and BCB Planarization

Daehyun Kim, K. Seo, Seongjin Yeon, 2004 .

Performance evaluation of 50 nm In/sub 0.7/Ga/sub 0.3/As HEMTs for beyond-CMOS logic applications

Kwang-Seok Seo, J.A. del Alamo, Jae-Hak Lee, 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..

Performance Evaluation of 50 nm In0.7Ga0.3As HEMTs For Beyond-CMOS Logic Applications

Kwang-Seok Seo, Jae-Hak Lee, Daehyun Kim, 2005 .

Logic Suitability of 50-nm $\hbox{In}_{0.7} \hbox{Ga}_{0.3}\hbox{As}$ HEMTs for Beyond-CMOS Applications

Dae-Hyun Kim, Kwang-Seok Seo, J.A. del Alamo, 2007, IEEE Transactions on Electron Devices.

Impact of Output Conductance on Current-Gain Cut-Off Frequency in InxGa1-xAs/In0.52Al0.48As Quantum-Well High-Electron-Mobility Transistors on InP Substrate

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2023, Electronics.

Well-to-well non-uniformity in InGaN/GaN multiple quantum wells characterized by capacitance-voltage measurement with additional laser illumination

Jung-Hoon Song, Yanqun Dong, Soon-Ku Hong, 2012 .

Analytical and Physical Investigation on Source Resistance in InxGa1−xAs Quantum-Well High-Electron-Mobility Transistors

Daehyun Kim, H. Sugiyama, H. Matsuzaki, 2023, Micromachines.