D. Zakharov

发表

Electrical, microstructural, and thermal stability characteristics of Ta/Ti/Ni/Au contacts to n-GaN

David J. Smith, A. Motayed, A. Davydov, 2004 .

Characterization and Manipulation of Exposed Ge Nanocrystals

J. Beeman, E. Haller, I. Sharp, 2004 .

A scattering rate approach to the understanding of absorption line broadening in near-infrared AlGaN/GaN quantum wells 6th Space Agency – MOD Workshop on Wideband Gap Semiconductors and Components

D. Indjin, A. Valavanis, L. Lever, 2013 .

Initial growth stages of epitaxial BaTiO3 films on vicinal SrTiO3 : Nb (001) substrates

U. Gösele, M. Alexe, D. Hesse, 2001 .

Defects in p-doped bulk GaN crystals grown with Ga polarity

M. O'Keefe, Z. Liliental-Weber, T. Tomaszewicz, 2005 .

Compositional modulation in InxGa1-xNInxGa1-xN

E. Haller, W. Schaff, Z. Liliental-Weber, 2006 .

Growth of InGaN HBTs by MOCVD

P. Asbeck, R. Dupuis, M. Feng, 2006 .

Effect of gallium nitride template layer strain on the growth of InxGa1-xN∕GaN multiple quantum well light emitting diodes

J. R. Williams, Dmitri N. Zakharov, T. B. Ng, 2004 .

Modeling the Stress Evolution of Ion Beam Synthesized Nanocrystals

J. Beeman, E. Haller, I. Sharp, 2004 .

Liberation of ion implanted Ge nanocrystals from a silicon dioxide matrix via hydrofluoric acid vapor etching

J. Beeman, E. Haller, I. Sharp, 2003 .

Transmission Electron Microscopy (TEM) Studies of Ge Nanocrystals

J. Beeman, E. Haller, I. Sharp, 2004 .

Growth evolution and pendeo-epitaxy of non-polar AlN and GaN thin films on 4H–SiC (1 1 2¯ 0)

D. Batchelor, R. Davis, Z. Liliental-Weber, 2007 .

Growth and characterization of pendeo-epitaxial GaN(112¯0) on 4H–SiC(112¯0) substrates

R. Davis, Z. Liliental-Weber, Z. Reitmeier, 2006 .

Growth and Characterization of Epitaxial GaN Thin Films on 4H-SiC (11.0) Substrates

R. Davis, Z. Liliental-Weber, D. Zakharov, 2003 .